july 2010 ?2010 fairchild semiconductor corporation FDZ3N513ZT rev. c www.fairchildsemi.com 1 FDZ3N513ZT integrated nmos and schottky diode FDZ3N513ZT integrated nmos and schottky diode features ? monolithic nmos and schottky diode ? ultra-small form factor 1mm x 1mm wlcsp ? max r ds(on) = 462 m at v gs = 4.5 v, i d = 0.3 a ? max r ds(on) = 520 m at v gs = 3.2 v, i d = 0.3 a ? hbm esd protection level > 2000v (note3) ? rohs compliant general description the FDZ3N513ZT is a monolithic nmos/ schottky combination (fetky) and is designed and wired to function as a discontinu - ous conduction mode (dcm) boost le d power train for mobile led backlighting applications. application ? boost converter power train for si ngle cell li-ion led backlighting package marking and ordering information part number device marking package reel size tape width quantity FDZ3N513ZT z3 wl-csp 1.0x1.0 7? 8mm 5000 units wl-csp 3d bumps facing down view wl-csp 3d bumps facing up view s d k g pin 1 wl-csp 1.0x1.0 bumps facing up view absolute maximum ratings thermal characteristics symbol parameter ratings units v ds nmos drain to source voltage 30 v v gs nmos gate to source voltage -0.3/5.5 v p d power dissipation @ t a = 25c (note 1a) 1 w i d maximum continuous nmos drain current (note 1a) 1.1 a v rrm schottky repetitive peak reverse voltage 25 v i o schottky average forward current 0.3 a t j , t stg operating junction and storage temperature -55/125 c esd electrostatic discharge protection cdm 2000 v r ja thermal resistance, junc tion to ambient - 1in 2 , 2oz. copper (note 1a) 100 c/w r ja thermal resistance, junction to ambient - minimum pad (note 1b) 260 c/w
www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation FDZ3N513ZT rev. c FDZ3N513ZT integrated nmos and schottky diode electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics schottky diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 47 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = +5 v/-0.3 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 0.5 0.7 1.5 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -1.6 mv/c r ds(on) drain to source on resistance v gs = 4.5 v, i d = 0.3 a 384 462 m v gs = 3.2 v, i d = 0.3 a 410 520 g fs forward transconductance v ds = 5 v, i d = 0.3 a 0.5 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 45 85 pf c oss output capacitance 45 85 pf c rss reverse transfer capacitance 10 25 pf r g gate resistance 2.0 t d(on) turn-on delay time v dd = 15 v, i d = 0.3 a v gs = 5 v, r gen = 6 3.1 10 ns t r rise time 1.9 10 ns t d(off) turn-off delay time 9.6 20 ns t f fall time 2.7 10 ns q g total gate charge (v gs = 4.5 v) v dd = 15 v i d = 0.3 a 1.0 nc q gs gate to source gate charge 0.1 nc q gd gate to drain ?miller? charge 0.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 0.3 a (note 2) 0.75 1.2 v t rr reverse recovery time i f = 0.3 a, di/dt = 100 a/ s 16 29 ns q rr reverse recovery charge 6.0 10 nc i r reverse leakage v r = 20 v t j = 25 c t j = 85 c 15 30 a 300 a v f forward voltage i f = 300 ma t j = 25 c t j = 85 c 0.72 1.2 v 0.74 notes: 1. r ja is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. the diode connected between the gate and source serves only as protection esd. no gate overvoltage rating is implied. a. 100 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 260 c/w when mounted on a minimum pad of 2 oz copper.
www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation FDZ3N513ZT rev. c FDZ3N513ZT integrated nmos and schottky diode typical characteristics t j = 25c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2 v gs = 1.5 v v gs = 3.5 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 2.5 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0.0 0.5 1.0 1.5 2.0 1.0 1.2 1.4 1.6 1.8 2.0 v gs = 1.8 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 2.5 v v gs = 4.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 0.3 a v gs = 4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 400 600 800 1000 1200 1400 1600 i d = 0.3 a t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0 v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 2 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation FDZ3N513ZT rev. c FDZ3N513ZT integrated nmos and schottky diode figure 7. 0 0.3 0.6 0.9 1.2 0 1 2 3 4 5 i d = 0.3 a v dd = 15 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 5 10 100 500 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage f i g u r e 9 . f o r w a r d b i a s s a f e op erating area figure 10. gate leakage current vs gate to source voltage figure 11. schottky diode reverse current figure 12. schottky diode forward voltage typical characteristics t j = 25c unless otherwise noted 024681012 -0.0005 0.0000 0.0005 0.0010 0.0015 0.0020 0.0025 0.0030 v ds = 0 v t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) i g , gate leakage current (a) 0.1 1 10 100 0.001 0.01 0.1 1 10 dc 10 s 1 s 100 ms 10 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 260 o c/w t c = 25 o c 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 t j = 85 o c t j = 60 o c t j = 25 o c t j = 125 o c i f , forward current (a) v f , forward voltage (v) 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 60 o c t j = 85 o c t j = 25 o c t j = 125 o c i r , reverse leakage current (a) v r , reverse voltage (v)
www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FDZ3N513ZT rev. c FDZ3N513ZT integrated nmos and schottky diode figure 13. single pulse maximum power dissipation figure 14. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 260 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.1 1 10 100 1000 p (pk) , peak transient power (w) single pulse r t ja = 260 o c/w t a = 25 o c t, pulse width (s)
www.fairchildsemi.com 6 ?2010 fairchild semiconductor corporation FDZ3N513ZT rev. c FDZ3N513ZT integrated nmos and schottky diode dimensional outline and pad layout product specific dimensions product d e x y FDZ3N513ZTucx 1.000 +/-0.030 1.000 +/-0.030 0.018 0.018
trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. accupower ? auto-spm ? build it now ? coreplus ? corepower ? crossvolt ? ctl ? current transfer logic ? deuxpeed ? dual cool? ecospark ? efficientmax ? esbc ? ? fairchild ? fairchild semiconductor ? fact quiet series ? fact ? fast ? fastvcore ? fetbench ? flashwriter ? * fps ? f-pfs ? frfet ? global power resource sm green fps ? green fps ? e-series ? g max ? gto ? intellimax ? isoplanar ? megabuck ? microcoupler ? microfet ? micropak ? micropak2 ? millerdrive ? motionmax ? motion-spm ? optohit? optologic ? optoplanar ? ? pdp spm? power-spm ? powertrench ? powerxs? programmable active droop ? qfet ? qs ? quiet series ? rapidconfigure ? ? saving our world, 1mw/w/kw at a time? signalwise ? smartmax ? smart start ? spm ? stealth ? superfet ? supersot ? -3 supersot ? -6 supersot ? -8 supremos ? syncfet ? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? trifault detect ? truecurrent ? * serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provi ded in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in t he industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counter feit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts eit her directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairch ild's quality standards for handling and storage and pr ovide access to fair child's full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropr iately address any warranty issues t hat may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from u nauthorized sources. fairchild is committed to combat this glo bal problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design s pecifications for product developmen t. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specific ations. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specificati ons on a product that is disconti nued by fairchild semiconductor. the datasheet is for reference information only. rev. i48 www.fairchildsemi.com 7 ?2010 fairchild semiconductor corporation FDZ3N513ZT rev. c FDZ3N513ZT integrated nmos and schottky diode
|
