m3d302 1. description n-channel enhancement mode ?eld-effect transistor in a plastic package using trenchmos? technology. product availability: PMN34UN in sot457 (tsop6). 2. features n trenchmos? technology n very fast switching n low threshold voltage n surface mount package. 3. applications n battery-powered motor control n load switch in notebook computers n high-speed switch in set top box power supplies n driver fet in dc-to-dc converters. 4. pinning information table 1: pinning - sot457 (tsop6), simpli?ed outline and symbol pin description simpli?ed outline symbol 1,2,5,6 drain (d) sot457 (tsop6) 3 gate (g) 4 source (s) mbk092 top view 13 2 4 5 6 s d g mbb076 PMN34UN product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
PMN34UN 5. quick reference data 6. limiting values table 2: quick reference data symbol parameter conditions typ max unit v ds drain-source voltage (dc) 25 c t j 150 c - 30 v i d drain current (dc) t sp =25 c; v gs = 4.5 v - 4.9 a p tot total power dissipation t sp =25 c - 1.75 w t j junction temperature - 150 c r dson drain-source on-state resistance v gs = 4.5 v; i d = 2 a; t j =25 c 3846m w v gs = 2.5 v; i d = 2 a; t j =25 c 4554m w v gs = 1.8 v; i d = 1.5 a; t j =25 c 5477m w table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) 25 c t j 150 c - 30 v v gs gate-source voltage (dc) - 8v i d drain current (dc) t sp =25 c; v gs = 4.5 v; figure 2 and 3 - 4.9 a t sp =70 c; v gs = 4.5 v; figure 2 - 3.9 a i dm peak drain current t sp =25 c; pulsed; t p 10 m s; figure 3 - 19.7 a p tot total power dissipation t sp =25 c; figure 1 - 1.75 w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c source-drain diode i s source (diode forward) current (dc) t sp =25 c - 1.45 a product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
|
