sangdest microelectronics technical data green products data sheet n0787, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBRB2535CT MBRB2535CT schottky rectifier applications: ? switching power supply ? converters ? free-wheeling diodes ? reverse battery protection features: ? 150 t j operation ? center tap configuration ? low forward voltage drop ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions (in inches / mm): option 1(hd) dimensions in millimeters symbol min. typical max. a 4.55 4.70 4.85 a1 0 0.10 0.25 a2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 d 8.55 8.70 8.85 d1 6.40 e 10.01 10.16 10.31 e1 7.6 e2 9.98 10.08 10.18 e 2.54 h 14.6 15.1 15.6 l 2.00 2.30 2.70 l1 1.17 1.27 1.40 l2 2.20 l3 0.25bsc e 0 - 8 e1 5 e2 4 e3 4
sangdest microelectronics technical data green products data sheet n0787, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBRB2535CT option 2(mx)
sangdest microelectronics technical data green products data sheet n0787, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBRB2535CT option 3(cj) d 2 pak
sangdest microelectronics technical data green products data sheet n0787, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBRB2535CT marking diagram: where xxxxx is yywwl mbr = device type b = package type 25 = forward current (25a) 35 = reverse voltage (35v) ct = configuration ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MBRB2535CT d 2 pak (pb-free) 800pcs / reel for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel p ackaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 35 v maximum dc reverse voltage v r - 35 v max. average forward current i f(av) 50% duty cycle @t c = 110c, rectangular wave form 12.5 a max. peak one cycle non- repetitive surge current i fsm 8.3 ms, half sine pulse 150 a
sangdest microelectronics technical data green products data sheet n0787, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBRB2535CT electrical characteristics: characteristics symbol condition max. units v f1 @ 12.5a, pulse, t j = 25 c 0.65 v max. forward voltage drop (per leg) * v f2 @ 12.5a, pulse, t j = 125 c 0.60 v max. reverse current (per leg) * i r1 @v r = rated v r pulse t j = 25 c 1.0 ma i r2 @v r = rated v r , pulse t j = 125 c 500 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz v sig =50mv(p-p) 700 pf max. voltage rate of change dv/dt - 10,000 v/ s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r jc dc operation 1.0 c/w approximate weight wt - 1.85 g case style d2pak
sangdest microelectronics technical data green products data sheet n0787, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBRB2535CT 10 100 1000 10000 0 5 10 15 20 25 30 35 40 reverse voltage-vr(v) junction capacitance-ct(pf) d 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 reverse voltage-vr(%) reverse current-ir(ma) 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 forward voltage drop-vf(v) instantaneous forward current-if(a) fig.1-typical junction capacitance fig.2-typical reverse characteristics fi g .3-t yp ical instantaneous forward volta g e characteristics tj=25 tj=25 tj=125 tj=25 tj=125
sangdest microelectronics technical data green products data sheet n0787, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBRB2535CT disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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