elektronische bauelemente SGM9452 4a , 20v , r ds(on) 38 m ? n-channel enhancement mode power mosfet 13-dec-2013 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of -c specifies halogen & lead-free description the SGM9452 provide the designer with the b est combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-89 pa ckage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features fast switching dynamic dv/dt rating repetitive avalanche rated simple drive requirement package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current i d 4 a power dissipation p d 0.5 w thermal resistance junction-ambient. r ja 250 c / w operating junction & storage temperature t j , t stg 150, -55~150 c sot-89 millimeter millimeter ref. min. max. ref. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52 1 g 3 s d 24
elektronische bauelemente SGM9452 4a , 20v , r ds(on) 38 m ? n-channel enhancement mode power mosfet 13-dec-2013 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions drain-source breakdown voltage bv dss 20 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 0.7 - 1.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 12v, v ds =0 drain-source leakage current i dss - - 1 a v ds =20v, v gs =0 - - 38 v gs =10v, i d =4a - - 50 v gs =4.5v, i d =4a static drain-source on-resistance 1 r ds(on) - - 80 m v gs =2.5v, i d =3a forward transconductance 1 g fs 3 - - s v ds =5v, i d =3a dynamic characteristics 2 turn-on delay time 1.2 t d(on) - 8 - rise time 2 t r - 9 - turn-off delay time 2 t d(off) - 13 - fall time 2 t f - 3 - ns v ds =10v i d =1a v gs =5v r gen =3.3 r d =10 input capacitance c iss - 570 - output capacitance c oss - 80 - reverse transfer capacitance c rss - 65 - pf v gs =0 v ds =20v f=1.0 mhz drain-source body diode characteristics forward on voltage 1 v sd - - 1.3 v i s =1a, v gs =0 notes: 1. pulse test ; pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify
elektronische bauelemente SGM9452 4a , 20v , r ds(on) 38 m ? n-channel enhancement mode power mosfet 13-dec-2013 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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