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  p PJT7801 july 10,2013-rev.00 page 1 20v p-channel enhancement m ode mosfet ? esd protected voltage -20 v current -0.7a sot-363 unit: inch(mm) fig.161 (top view) features ? r ds(on) , v gs @-4.5v, i d @-0.7a<325m ? ? r ds(on) , v gs @-2.5v, i d @-0.6a<420m ? ? r ds(on) , v gs @-1.8v, i d @-0.5a<600m ? ? advanced trench process technology ? specially designed for switch lo ad, pwm application, etc. ? esd protected ? lead free in comply with eu rohs 2011/65/eu directives. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: sot-363 package ? terminals : solderable per mil-std-750, method 2026 ? approx. weight: 0.0002 ounces, 0.006 grams ? marking: t01 parameter symbol limit units drain-source voltage v ds -20 v gate-source voltage v gs + 8 v continuous drain current i d -0.7 a pulsed drain current (note 4) i dm -2.8 a power dissipation t a =25 o c p d 350 mw derate above 25 o c 2.8 mw/ o c operating junction and storage temperature range t j ,t stg -55~150 o c thermal resistance - junction to ambient (note 3) r ja 357 o c/w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p PJT7801 july 10,2013-rev.00 page 2 electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -20 - - v gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -0.5 -0.64 -1.0 v drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-0.7a - 260 325 m ? v gs =-2.5v, i d =-0.6a - 310 420 v gs =-1.8v, i d =-0.5a - 400 600 zero gate voltage drain current i dss v ds =-20v, v gs =0v - -0.01 -1 ua gate-source leakage current i gss v gs =+ 8v, v ds =0v - + 3.5 + 10 ua dynamic total gate charge q g v ds =-10v, i d =-0.7a, v gs =-4.5v (note 1,2) - 2.2 - nc gate-source charge q gs - 0.4 - gate-drain charge q gd - 0.5 - input capacitance ciss v ds =-10v, v gs =0v, f=1.0mhz - 165 - pf output capacitance coss - 25 - reverse transfer capacitance crss - 14.7 - switching turn-on delay time td (on) v dd =-10v, i d =-0.7a, v gs =-4.5v, r g =6 ? (note 1,2) - 8.9 - ns turn-on rise time tr 37 - turn-off delay time td (off) 127 - turn-off fall time tf - 70 - drain-source diode maximum continuous drain-source diode forward current i s --- - - -1 a diode forward voltage v sd i s =-1a, v gs =0v -0.86 -1.2 v notes: 1. pulse width< 300us, duty cycle< 2% 2. essentially independent of operating temperature typical characteristics. 3. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 in ch fr-4 with 2oz. square pad of copper. 4. the maximum current rating is package limited.
p PJT7801 july 10,2013-rev.00 page 3 typical characteristic curves fig.1 on-region characteristics fig.2 transfer characteristics fig.3 on-resistance vs. drain current fig.4 on-resistance vs. junction temperature fig.5 on-resistance variation with vgs. fig.6 body dlode characterlslcs
p PJT7801 july 10,2013-rev.00 page 4 typical characteristic curves fig.7 gate-charge characteristics fig.8 threshold voltage variation with temperature. fig.9 capacitance vs. drain-source voltage.
p PJT7801 july 10,2013-rev.00 page 5 part no packing code version mounting pad layout part no packing code version package type packing type marking version PJT7801_r1_00001 sot-363 3k pcs / 7? reel t01 halogen free PJT7801_r2_00001 sot-363 10k pcs / 13? reel t01 halogen free
p PJT7801 july 10,2013-rev.00 page 6 disclaimer reproducing and modifying information of the docum ent is prohibited without permission from panjit international inc.. panjit international inc. reserves the rights to ma ke changes of the content herein the document anytime without notification. please refer to our website for the latest document. panjit international inc. disclaims any and all liabilit y arising out of the application or use of any product including damages incidentally and consequentially occurred. panjit international inc. does not assume any and a ll implied warranties, includi ng warranties of fitness for particular purpose, non-infringement and merchantability. applications shown on the herein document are ex amples of standard use and o peration. customers are responsible in comprehending the suitable use in particul ar applications. panjit international inc. makes no representation or warranty t hat such applications will be suitable for the specified use without further testing or modification. the products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace mach inery et cetera. customers using or selling these products for use in such applications do so at their ow n risk and agree to fully indemnify panjit international inc. for any damages resulting from such improper use or sale. since panjit uses lot number as the tracking ba se, please provide the lot number for tracking when complaining.


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Price & Availability of PJT7801
DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
PJT7801_R1_00001
3757-PJT7801_R1_00001CT-ND
PanJit Group 20V P-CHANNEL ENHANCEMENT MODE M 75000: USD0.07799
30000: USD0.09179
9000: USD0.09299
6000: USD0.10499
3000: USD0.10739
1000: USD0.11999
500: USD0.15418
100: USD0.174
10: USD0.345
1: USD0.49
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8570

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
PJT7801_R1_00001
241-PJT7801_R1_00001
PanJit Semiconductor MOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected 1: USD0.49
10: USD0.367
100: USD0.228
1000: USD0.123
3000: USD0.104
RFQ
0
PJT7801_R2_00001
241-PJT7801_R2_00001
PanJit Semiconductor MOSFETs 20V P-Channel Enhancement Mode MOSFET-ESD Protected 10000: USD0.092
RFQ
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TTI

Part # Manufacturer Description Price BuyNow  Qty.
PJT7801-R1-00001
PJT7801-R1-00001
PanJit Semiconductor MOSFETs SOT-363/MOS/SOT/NFET-20TSMP 3000: USD0.107
6000: USD0.105
9000: USD0.093
30000: USD0.091
75000: USD0.078
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21000

TME

Part # Manufacturer Description Price BuyNow  Qty.
PJT7801_R1_00001
PJT7801-R1
PanJit Semiconductor Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW 3000: USD0.085
1000: USD0.097
500: USD0.108
250: USD0.144
100: USD0.18
10: USD0.214
1: USD0.256
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NAC

Part # Manufacturer Description Price BuyNow  Qty.
PJT7801_R1_00001
PanJit Semiconductor 20V P-Channel Enhancement Mode MOSFET�ESD Protected 6000: USD0.09
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PJT7801_R2_00001
PanJit Semiconductor 20V P-Channel Enhancement Mode MOSFET�ESD Protected RFQ
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PJT7801_R1
PanJit Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR - 13IN. REEL. Package Type: SOD-123HE RFQ
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PJT7801_R2
PanJit Semiconductor 60V P-Channel Enhancement Mode MOSFET - 7IN. REEL. Package Type: SOT-363 RFQ
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Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
PJT7801_R1_00001
PJT7801_R1_00001
PanJit Semiconductor Trans MOSFET Array Dual P-CH 20V 0.7A 6-Pin SOT-363 T/R (Alt: PJT7801_R1_00001) BuyNow
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Ozdisan Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
PJT7801_R1_00001
PanJit Group MOSFET DIS.700mA 20V P-CH SOT363 SMT 3000: USD0.1069
5: USD0.12293
RFQ
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PJT7801_R2_00001
PanJit Group MOSFET DIS.700mA 20V P-CH SOT363 SMT 10000: USD0.0978
5: USD0.11932
RFQ
0

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