this is information on a product in full production. november 2013 docid023598 rev 3 1/10 stpsc4h065 650 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? high forward surge capability description the sic diode is an ultrahigh performance power schottky diode. it is ma nufactured us ing a silicon carbide substrate. the wide band gap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimal capacitive turn-off behavior is independent of temperature. especially suited for use in pfc applications, this st sic diode will boost the performance in hard switching conditions. its high forward surge capability ensures a good robustness during transient phases. k k a k a nc k a to-220ac STPSC4H065D dpak stpsc4h065b-tr table 1. device summary symbol value i f(av) 4 a v rrm 650 v t j (max) 175 c www.st.com
characteristics stpsc4h065 2/10 docid023598 rev 3 1 characteristics to evaluate the conduction loss es use the following equation: p = 1.35 x i f(av) + 0.288 x i f 2 (rms) table 2. absolute ratings (limiting values at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 650 v i f(rms) forward rms current 22 a i f(av) average forward current t c = 145 c (1) , dc 1. value based on r th(j-c) max. 4 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s square, t c = 25 c 38 35 200 a i frm repetitive peak forward current t c = 145 c (1) , t j = 175 c, ? = 0.1 11 a t stg storage temperature range -55 to +175 c t j operating junction temperature (2) 2. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 c table 3. thermal resistance symbol parameter value unit typ. max. r th(j-c) junction to case 1.8 2.7 c/w table 4. static electrical characteristics symbol parameter tests conditions min. typ. max. unit i r (1) 1. t p = 10 ms, ? < 2% reverse leakage current t j = 25 c v r = v rrm -340 a t j = 150 c - 35 170 v f (2) 2. t p = 500 s, ? < 2% forward voltage drop t j = 25 c i f = 4 a - 1.56 1.75 v t j = 150 c - 1.98 2.5 table 5. dynamic electrical characteristics symbol parameter test conditions min. typ. unit q cj (1) 1. most accurate value for the capacitive charge: total capacitive charge v r = 400 v 12.5 nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz 200 pf v r = 400 v, t c = 25 c, f = 1 mhz 21 dptot dtj --------------- 1 rth j a ? ?? ------------------------- - ? q = c j (v r ).dv r cj v out 0
docid023598 rev 3 3/10 stpsc4h065 characteristics 10 figure 1. forward voltage drop versus forward current (typical values, low level) figure 2. forward voltage drop versus forward current (typical values, high level) a) i fm ( 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c v fm (v) 0 4 8 12 16 20 24 28 32 36 40 012345678 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c i fm (a) v fm (v) figure 3. reverse leakage current versus reverse voltage applied (typical values) figure 4. peak forward current versus case temperature i r (a) 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 50 100 150 200 250 300 350 400 450 500 550 600 650 t j =25 c t j =150 c t j =175 c v r (v) i m (a) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 = 0.1 = 0.3 = 0.5 = 1 = 0.7 t =tp/t tp t c (c) figure 5. junction capacitance versus reverse voltage applied (typical values) figure 6. relative variation of thermal impedance junction to case versus pulse duration 0 50 100 150 200 250 0.1 1.0 10.0 100.0 1000.0 f=1 mhz v osc =30 mv rms t j =25 c v r (v) c j (pf) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s)
characteristics stpsc4h065 4/10 docid023598 rev 3 figure 7. non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) figure 8. total capacitive charges versus reverse voltage applied (typical values) i fsm (a) 1.e+01 1.e+02 1.e+03 1.e-05 1.e-04 1.e-03 1.e-02 t a =25 c t a =125 c t p (s) 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 v r (v) q cj (nc)
docid023598 rev 3 5/10 stpsc4h065 package information 10 2 package information ? epoxy meets ul94, v0 ? recommended torque value (to-220ac): 0.4 to 0.6 nm ? cooling method: conduction (c) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. figure 9. to-220ac dimension definitions a c d l7 ? i l5 l6 l9 l4 f h2 g l2 f1 e m
package information stpsc4h065 6/10 docid023598 rev 3 table 6. to-220ac dimension values ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 h2 10.00 10.40 0.393 0.409 l2 16.40 typ. 0.645 typ. l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. i 3.75 3.85 0.147 0.151
docid023598 rev 3 7/10 stpsc4h065 package information 10 figure 10. dpak dimension definitions l1 l a1 r r d d1 d c a c2 v2 a2 h l4 e1 e b l2 e b4 e1 gauge plane 0.25
package information stpsc4h065 8/10 docid023598 rev 3 figure 11. footprint (dimensions in mm) table 7. dpak dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.20 2.40 0.086 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 5.20 5.40 0.204 0.212 c 0.45 0.60 0.017 0.023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 d1 5.10 0.201 e 6.40 6.60 0.251 0.259 e1 4.70 0.185 e2.28 0.090 e1 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.397 l 1.00 1.50 0.039 0.059 l1 2.80 0.11 l2 0.80 0.032 l4 0.60 1.00 0.023 0.039 r 0.2 0.008 v2 0 8 0 8 6.3 6.1 10.7 2.8 1.5 4.572 a b this footprint ensures insultation up to 630 v rms (according to iec 664-1) the device must be positioned within 0.05 a b
docid023598 rev 3 9/10 stpsc4h065 ordering information 10 3 ordering information 4 revision history table 8. ordering information order code marking package weight base qty delivery mode STPSC4H065D STPSC4H065D to-220ac 1.86 g 50 tube stpsc4h065b-tr stpsc 4h065 dpak 0.32 g 2500 tape and reel table 9. document revision history date revision changes 31-aug-2012 1 first issue. 10-oct-2012 2 added max. value in table 3 . 07-nov-2013 3 updated figure 1 , figure 2 , figure 10 , figure 11 and table 7 .
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