dm n3016 l dn document number: ds 37307 rev. 2 - 2 1 of 7 www.diodes.com january 2015 ? diodes incorporated dm n3016 l dn advanced information new product 30v dual n - channel enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c n - channel 30 v 20 m ? @ v gs = 10 v 7.3a 2 4 m ? @ v gs = 4 .5v 6.7a description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc motor c ontrol ? dc - ac inverters features ? low on - resistance ? low input capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: v - dfn 3030 - 8 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? weight: 0.0 2 grams ( a pproximate) ordering information (note 4) part number case packaging dm n3016ldn - 7 v - dfn 3030 - 8 3000 /tape & reel dm n3016ldn - 13 v - dfn 3030 - 8 10000 /tape & reel notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http/ /www.diodes.com/products/packages.html . marking information bottom view top view equivalent circuit q1 n - channel mosfet q2 n - channel mosfet v - dfn3030 - 8 n16 = product type marking code yyww = date code marking yy = last digit of year (ex: 1 3 for 201 3 ) ww = week code (01 ~ 53) n16 yyww pin 1 pin out configuration (bottom view) d 2 s 2 g 2 g 1 s2 d 1 d 2 d 1 g2 s1 d 2 1 2 3 4 8 7 6 5 d 1 s 1 g 1
dm n3016 l dn document number: ds 37307 rev. 2 - 2 2 of 7 www.diodes.com january 2015 ? diodes incorporated dm n3016 l dn advanced information new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 c t a = + 70 c i d 7.3 5.8 a t<10s t a = + 25 c t a = + 70 c i d 9.2 7.3 a maximum continuous body diode f orward current (note 6 ) i s 2. 5 a pulsed drain current ( 10s p ulse, d uty c ycle = 1% ) i dm 45 a avalanche current (note 7) l = 0.1mh i as 22 a avalanche energy (note 7) l = 0.1mh e as 24 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 1.1 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 119 c/w t<10s 75 total power dissipation (note 6 ) t a = + 25c p d 1.6 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 78 c/w t<10s 49 thermal resistance, junction to case (note 6 ) r j c 13.5 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250a dss - - 1 ds = 30 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1.4 - 2.0 v v ds = v gs , i d = 250 a ds(on) - - 20 m ? gs = 10 v, i d = 11a - - 2 4 v gs = 4 .5v, i d = 9a diode forward voltage v sd - 0.70 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 9 ) input capacitance c iss - 1415 - pf v ds = 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 119 - reverse transfer capacitance c rss - 82 - gate r esistance r g - 2.6 - ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g - 11.3 - nc v ds = 1 5 v, i d = 12 a total gate charge ( v gs = 10 v ) q g - 25.1 - gate - source charge q gs - 3.5 - gate - drain charge q gd - 3.6 - turn - on delay time t d( on ) - 4.8 - ns v dd = 15 v, v gs = 10 v, r l = 1.25 g = 3 r - 16.5 - turn - off delay time t d( off ) - 26.1 - turn - off fall time t f - 5.6 - reverse recovery time t rr - 12.3 - ns i f = 12a, di/ dt = 500a/ rr - 10.4 - n c notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 in. square copper plate . 7 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm n3016 l dn document number: ds 37307 rev. 2 - 2 3 of 7 www.diodes.com january 2015 ? diodes incorporated dm n3016 l dn advanced information new product 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 i d , d rain current (a) v ds , drain - source voltage (v) fig ure 1 typical output characteristic v gs = 10.0v v gs = 2.2v v gs = 2.5v v gs = 3.0v v gs = 3.5v v gs = 4.5v v gs = 4.0v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2 typical transfer characteristic v ds = 5.0v t a = 150 o c t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c 0 0.01 0.02 0.03 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3 typical on - resistance vs drain current and gate voltage v gs = 10v v gs = 4.5v 0 0.005 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain current (a) figure 4 typical on - resistance vs drain current and temperature v gs = 4.5v t a = - 55 o c t a = 150 o c t a = 125 o c t a = 85 o c t a = 25 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 5 on - resistance variation with temperature v gs = 10v, i d =10a v gs = 4.5v, i d =5a 0 0.004 0.008 0.012 0.016 0.02 0.024 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance (normalized) t j , junction temperature ( ) figure 6 on - resistance variation with temperature v gs = 4.5v, i d =5a v gs = 10v, i d =10a
dm n3016 l dn document number: ds 37307 rev. 2 - 2 4 of 7 www.diodes.com january 2015 ? diodes incorporated dm n3016 l dn advanced information new product 0 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( ) figure 7 gate theshold variation vs junction temperature i d = 1ma i d = 250 a 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 8 diode forward voltage vs current v gs = 0v, t a = 25 o c 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 9 typical junction capacitance f=1mhz c iss c oss c rss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v gs (v) qg (nc) figure 10 gate charge v ds = 15v, i d =12a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 11 soa, safe operation area t j(max) =150 t a =25 v gs =10v single pulse dut on 1*mrp board r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm n3016 l dn document number: ds 37307 rev. 2 - 2 5 of 7 www.diodes.com january 2015 ? diodes incorporated dm n3016 l dn advanced information new product 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 12 transient thermal resistance r ja (t)=r(t) * r ja r ja =117 /w duty cycle, d=t1/t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9
dm n3016 l dn document number: ds 37307 rev. 2 - 2 6 of 7 www.diodes.com january 2015 ? diodes incorporated dm n3016 l dn advanced information new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. v - dfn3 030 - 8 (type j) dim min max typ a 0. 77 0. 83 0.80 a1 0 .00 0.05 0.02 a 3 0. 203 bsc b 0. 20 0. 30 0. 25 d 2.95 3. 050 3. 0 0 d2 0.90 1.10 1.00 d2a 0.90 1.10 1.00 e 2.95 3. 050 3. 0 0 e2 1.72 1.92 1.82 e2a 1.72 1.92 1.82 e 0. 65bsc l 0. 27 0. 38 0. 33 la 0.15 0.25 0.20 k 0.35 typ z 0.40 bsc all dimensions in mm dimensions value (in mm) c 0.650 g 0.250 g1 0.550 x 0.350 x1 1.100 x2 1.100 x3 1.225 x4 2.375 y 0.530 y1 0.300 y2 1.920 y3 1.920 y4 1.650 y5 3.300 y5 x4 c y3 y1 y x x1 x2 y2 g1 g x3 y4 a a1 a3 seating plane d e e z e/2 b d/2 d2a d2 e2a e2 k la l pin1# id
dm n3016 l dn document number: ds 37307 rev. 2 - 2 7 of 7 www.diodes.com january 2015 ? diodes incorporated dm n3016 l dn advanced information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.d iodes.com
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