page 1 of 8 document no. 70-0071-06 www.psemi.com ?2003-2009 peregrine semiconductor corp. all rights reserved. rf1 ctrl rfc cmos control driver esd esd esd the PE4237 rf switch is designed to cover a broad range of applications from near dc to 4000 mhz. this reflective switch integrates on-board cmos control logic driven by a single-pin, low voltage cmos or ttl control input. using a nominal +3- volt power supply, a 1 db compression point of +32 dbm can be achieved. the PE4237 also exhibits outstanding isolation of better than 43 db at 1000 mhz and is offered in a small 3x3 mm dfn package. the PE4237 is manufactured on peregrine?s ultracmos? process, a patented variation of silicon-on-insulator (soi) technology on a sapphire substrate, offering the performance of gaas with the economy and integration of conventional cmos. product specification spdt ultracmos? rf switch dc - 4000 mhz product description figure 1. functional diagram PE4237 features single 3.0-volt power supply low insertion loss: 0.35 db at 1000 mhz, 0.45 db at 2000 mhz high isolation of 43 db at 1000 mhz, 35 db at 2000 mhz typical 1 db compression point of +32 dbm single-pin cmos or ttl logic control available in a 6-lead dfn package notes: 1. device linearity will begin to degrade below 10 mhz. 2. the dc transient at the output of any port of the switch when the control voltage is switched from low to high or high to low in a 50 ? test set-up, measured with 1ns risetime pulses and 500 mhz bandwidth. table 1. electrical specifications @ +25 c, v dd = 3 v (zs = zl = 50 ? ) figure 2. package type 6-lead dfn parameter conditions minimum typical maximum units operation frequency 1 dc 4000 mhz insertion loss 1000 mhz 2000 mhz 0.35 0.45 0.50 0.60 db db isolation ? rfc to rf1/rf2 1000 mhz 2000 mhz 41 33 43 35 db db isolation ? rf1 to rf2 1000 mhz 2000 mhz 33.5 26.5 35 28 db db return loss 1000 mhz 2000 mhz 19 10.5 24 14 db db ?on? switching time 50% ctrl to 0.1 db final value, 2 ghz 200 ns ?off? switching time 50% ctrl to 25 db isolation, 2 ghz 90 ns video feedthrough 2 15 mv pp input 1 db compression 2000 mhz 30 32 dbm input ip3 2000 mhz, 17 dbm 50 dbm
product specification PE4237 page 2 of 8 ?2003-2009 peregrine semiconductor corp. all rights reserved. document no. 70-0071-06 ultracmos? rfic solutions table 2. pin descriptions table 4. absolute maximum ratings electrostatic discharge (esd) precautions when handling this ultracmos? device, observe the same precautions that you would use with other esd-sensitive devices. although this device contains circuitry to protect it from damage due to esd, precautions should be taken to avoid exceeding the rating specified in table 4. latch-up avoidance unlike conventional cmos devices, ultracmos? devices are immune to latch-up. table 3. operating ranges notes: 1. all rf pins must be dc blocked with an external series capacitor or held at 0 v dc . figure 3. pin configuration table 5. control logic truth table exceeding absolute maximum ratings may cause permanent damage. operation should be restricted to the limits in the operating ranges table. operation between operating range maximum and absolute maximum for extended periods may reduce reliability. exposed solder pad - shorted to pin 2 (bottom side) rf2 gnd rf1 rfc ctrl v dd 4 5 6 3 2 1 pin no. pin name description 1 rf2 rf2 port. 1 2 gnd ground connection. traces should be physically short and connected to the ground plane. this pin is connected to the exposed solder pad that also must be soldered to the ground plane for best performance. 3 rf1 rf1 port. 1 4 v dd nominal 3 v supply connection. 5 ctrl cmos or ttl logic level: high = rfc to rf1 signal path low = rfc to rf2 signal path 6 rfc common rf port for switch. 1 symbol parameter/conditions min max units v dd power supply voltage -0.3 4.0 v v i voltage on any input except for the ctrl input -0.3 v dd + 0.3 v v ctrl voltage on ctrl input 5.0 v t st storage temperature range -65 150 c p in input power (50 ? ) 35 dbm v esd esd voltage (human body model) 250 v parameter min typ max units v dd power supply voltage 2.7 3.0 3.3 v i dd power supply current (v dd = 3v, v cntl = 3v) 29 35 a control voltage high 0.7xv dd v control voltage low 0.3xv dd v t op operating temperature range -40 85 c control voltage signal path ctrl = cmos or ttl high rfc to rf1 ctrl = cmos or ttl low rfc to rf2 control logic input the control logic input pin (ctrl) is typically driven by a 3-volt cmos logic level signal. for flexibility to support systems that have 5-volt control logic drivers, the control logic input has been designed to handle a standard 5-volt ttl control signal. this ttl control signal input must not exceed 5-volts or damage to the switch could result. moisture sensitivity level the moisture sensitivity level rating for the PE4237 in the 6-lead 3x3 dfn package is msl1.
product specification PE4237 ?2003-2009 peregrine semiconductor corp. all rights reserved. document no. 70-0071-06 www.psemi.com page 3 of 8 -100 -80 -60 -40 -20 0 0 500 1000 1500 2000 2500 3000 3500 4000 isolation (db) frequency (mhz) -1.5 -1.25 -1 -0.75 -0.5 -0.25 0 0 500 1000 1500 2000 2500 3000 3500 4000 insertion loss (db) frequency (mhz) -40 c 85 c 25 c 0 10 20 30 40 0 500 1000 1500 2000 2500 3000 1db compression point (dbm) frequency (mhz) -40 8 c 85 8 c 25 8 c -1.5 -1.25 -1 -0.75 -0.5 -0.25 0 0 500 1000 1500 2000 2500 3000 3500 4000 insertion loss (db) frequency (mhz) -40 c 85 c 25 c typical performance data @ -40 c to 85 c (unless otherwise noted) figure 4. insertion loss - rfc to rf1 figure 5. input 1db compression point figure 6. insertion loss - rfc to rf2 figure 7. isolation - rfc to rf1 t = 25 c
product specification PE4237 page 4 of 8 ?2003-2009 peregrine semiconductor corp. all rights reserved. document no. 70-0071-06 ultracmos? rfic solutions -40 -30 -20 -10 0 0 500 1000 1500 2000 2500 3000 3500 4000 return loss (db) frequency (mhz) rf1 rf2 -40 -30 -20 -10 0 0 500 1000 1500 2000 2500 3000 3500 4000 return loss (db ) frequency (mhz) -100 -80 -60 -40 -20 0 0 500 1000 1500 2000 2500 3000 3500 4000 isolation (db) frequency (mhz) rf1 rf2 -100 -80 -60 -40 -20 0 0 500 1000 1500 2000 2500 3000 3500 4000 isolation (db) frequency (mhz) typical performance data @ 25 c figure 8. isolation ? rfc to rf2 figure 9. isolation ? rf1 to rf2, rf2 to rf1 figure 10. return loss ? rfc to rf1, rf2 figure 11. return loss ? rf1, rf2
product specification PE4237 ?2003-2009 peregrine semiconductor corp. all rights reserved. document no. 70-0071-06 www.psemi.com page 5 of 8 evaluation kit the spdt switch evaluation kit board was designed to ease customer evaluation of the PE4237 spdt switch. the rf common port is connected through a 50 ? transmission line to the top left sma connector, j1. port 1 and port 2 are connected through 50 ? transmission lines to the top two sma connectors on the right side of the board, j2 and j3. a through transmission line connects sma connectors j4 and j5. this transmission line can be used to estimate the loss of the pcb over the environmental conditions being evaluated. the board is constructed of a two metal layer fr4 material with a total thickness of 0.031?. the bottom layer provides ground for the rf transmission lines. the transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 0.0476?, trace gaps of 0.030?, dielectric thickness of 0.028?, metal thickness of 0.0021? and r of 4.4. j6 provides a means for controlling dc and digital inputs to the device. starting from the lower left pin, the second pin to the right (j6-3) is connected to the device cntl input. the fourth pin to the right (j6-7) is connected to the device v dd input. a decoupling capacitor (100 pf) is provided on both ctrl and v dd traces. it is the responsibility of the customer to determine proper supply decoupling for their design application. removing these components from the evaluation board has not been shown to degrade rf performance. figure 12. evaluation board layouts figure 13. evaluation board schematic peregrine specification 102/0110 peregrine specification 101/0085
product specification PE4237 page 6 of 8 ?2003-2009 peregrine semiconductor corp. all rights reserved. document no. 70-0071-06 ultracmos? rfic solutions 6-lead dfn figure 14. package drawing note: the exposed solder pad (on the bottom of the package) is electrically connected to pin 2 (fused.) 06l slp (3x3mm) figure 15. marking specifications 4237 yyww zzzzz yyww = date code (last two digits of year and work week) zzzzz = last five digits of lot number
product specification PE4237 ?2003-2009 peregrine semiconductor corp. all rights reserved. document no. 70-0071-06 www.psemi.com page 7 of 8 table 6. dimensions dimension dfn 3x3 mm ao 3.23 0.1 bo 3.17 0.1 ko 1.37 0.1 p 4 0.1 w 8 +0.3, -0.1 t 0.254 0.02 r7 quantity 3000 r13 quantity n.a. note: r7 = 7 inch lock reel, r13 = 13 inch lock reel 6-lead dfn table 7. ordering information order code part marking description package shipping method 4237-51 4237 PE4237g-06dfn 3x3mm-12800f green 6-lead 3x3 mm dfn tape or loose 4237-52 4237 PE4237g-06dfn 3x3mm-3000c green 6-lead 3x3 mm dfn 3000 units / t&r 4237-00 PE4237-ek PE4237-06dfn 3x3mm-ek evaluation kit 1 / box figure 16. tape and reel specifications device orientation in tape top of device pin 1 tape feed direction
product specification PE4237 page 8 of 8 ?2003-2009 peregrine semiconductor corp. all rights reserved. document no. 70-0071-06 ultracmos? rfic solutions sales offices the americas peregrine semiconductor corporation 9380 carroll park drive san diego, ca 92121 tel: 858-731-9400 fax: 858-731-9499 europe peregrine semiconductor europe batiment maine 13-15 rue des quatre vents f-92380 garches, france tel: +33-1-4741-9173 fax : +33-1-4741-9173 for a list of representatives in your area, please refer to our web site at: www.psemi.com data sheet identification advance information the product is in a formative or design stage. the data sheet contains design target specifications for product development. specifications and features may change in any manner without notice. preliminary specification the data sheet contains preliminary data. additional data may be added at a later date. peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. product specification the data sheet contains final data. in the event peregrine decides to change the specifications, peregrine will notify customers of the intende d changes by issuing a dcn (document change notice). the information in this data sheet is believed to be reliable. however, peregrine assumes no liability for the use of this information. use shall be entirely at the user?s own risk. no patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. peregrine?s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the peregrine product could create a situation in which personal injury or death might occur. peregrine assumes no liabilit y for damages, including consequential or incidental damages, arising out of the use of its products in such applications. the peregrine name, logo, and utsi are registered trademarks and ultracmos, harp, multiswitch and dune are trademarks of peregrine semiconductor corp. high-reliability and defense products americas san diego, ca, usa phone: 858-731-9475 fax: 848-731-9499 europe/asia-pacific aix-en-provence cedex 3, france phone: +33-4-4239-3361 fax: +33-4-4239-7227 peregrine semiconductor, asia pacific (apac) shanghai, 200040, p.r. china tel: +86-21-5836-8276 fax: +86-21-5836-7652 peregrine semiconductor, korea #b-2607, kolon tripolis, 210 geumgok-dong, bundang-gu, seongnam-si gyeonggi-do, 463-943 south korea tel: +82-31-728-3939 fax: +82-31-728-3940 peregrine semiconductor k.k., japan teikoku hotel tower 10b-6 1-1-1 uchisaiwai-cho, chiyoda-ku tokyo 100-0011 japan tel: +81-3-3502-5211 fax: +81-3-3502-5213
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