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| savantic semiconductor product specification silicon npn power transistors BUL510 description with to-220c package high voltage,high speed applications electronic ballasts for fluorescent lighting switch mode power supplies electronic transformer for halogen lamp pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 10 a i cm collector current-peak t p <5ms 18 a i b base current (dc) 3.5 a i bm base current-peak t p <5ms 7 a p tot total power dissipation t c =25 100 w t j maximum operating junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-case thermal resistance junction to case 1.25 /w downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors BUL510 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0; l=25mh 450 v v (br)ebo emitter-base breakdwon voltage i e =10ma ;i c =0 9 v v cesat-1 collector-emitter saturation voltage i c =3a; i b =0.6a 0.8 v v cesat-2 collector-emitter saturation voltage i c =4a ;i b =0.8a 1.0 v v cesat-3 collector-emitter saturation voltage i c =5a ;i b =1.25a 1.5 v v besat-1 base-emitter saturation voltage i c =3a ;i b =0.6a 1.2 v v besat-2 base-emitter saturation voltage i c =5a; i b =1.25a 1.5 v i ces collector cut-off current v ce =1000v; v be =0 t c =125 100 500 a i ceo collector cut-off current v ce =450v; i b =0 250 a h fe-1 dc current gain i c =1a ; v ce =5v 15 45 h fe-2 dc current gain i c =10ma ; v ce =5v 10 switching times inductive load t s storage time 3.4 s t f fall time i c =4a ;v cl =300v i b1 =0.8a;i b2 =-1.6a l=200h 0.15 s downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors BUL510 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) downloaded from: http:/// |
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