BPW21R www.vishay.com vishay semiconductors rev. 1.7, 23-nov-11 1 document number: 81519 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon photodiode description BPW21R is a planar silicon pn photodiode in a hermetically sealed short to-5 case, especially designed for high precision linear applications. due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. on the other hand, there is a st rictly logarithmic correlation between open circuit voltage and illumination over the same range. the device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye. features ? package type: leaded ? package form: to-5 ? dimensions (in mm): ? 8.13 ? radiant sensitive area (in mm 2 ): 7.5 ? high photo sensitivity ? adapted to human eye responsivity ? angle of half sensitivity: ? = 50 ? hermetically sealed package ? cathode connected to package ? flat glass window ? low dark current ? high shunt resistance ? high linearity ? compliant to rohs directive 2002/95/ec and in accordance with weee 2002/96/ec applications ? sensor in exposure and color measuring purposes note ? test condition see table basic characteristics note ? moq: minimum order quantity 94 8394 product summary component i ra (a) ? (deg) 0.5 (nm) BPW21R 9 50 420 to 675 ordering information ordering code packaging remarks package form BPW21R bulk moq: 500 pcs, 500 pcs/bulk to-5 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 10 v power dissipation t amb 50 c p v 300 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 125 c storage temperature range t stg - 40 to + 125 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 250 k/w
BPW21R www.vishay.com vishay semiconductors rev. 1.7, 23-nov-11 2 document number: 81519 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.0 1.3 v breakdown voltage i r = 20 a, e = 0 v (br) 10 v reverse dark current v r = 5 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 1.2 nf v r = 5 v, f = 1 mhz, e = 0 c d 400 pf dark resistance v r = 10 mv r d 38 g open circuit voltage e a = 1 klx v o 280 450 mv temperature coefficient of v o e a = 1 klx tk vo - 2 mv/k short circuit current e a = 1 klx i k 4.5 9 a temperature coefficient of i k e a = 1 klx tk ik - 0.05 %/k reverse light current e a = 1 klx, v r = 5 v i ra 4.5 9 a sensitivity v r = 5 v, e a = 10 -2 to 10 5 lx s 9 na/ix angle of half sensitivity ? 50 deg wavelength of peak sensitivity p 565 nm range of spectral bandwidth 0.5 420 to 675 nm rise time v r = 0 v, r l = 1 k , = 660 nm t r 3.1 s fall time v r = 0 v, r l = 1 k , = 660 nm t f 3.0 s 40 60 80 120 100 20 i - reverse dark current (na) ro 94 8468 10 10 1 10 2 10 3 10 4 v r =5v t amb - ambient temperature (c) 020406080 0.8 0.9 1.0 1.1 1.3 120 1.2 100 94 8738 t amb - ambient temperature i ra rel - relativereverse light current
BPW21R www.vishay.com vishay semiconductors rev. 1.7, 23-nov-11 3 document number: 81519 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - short circuit current vs. illuminance fig. 4 - diode capacitance vs. reverse voltage fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant sensitivity vs. angular displacement 94 8476 10 0 10 -2 10 -1 10 1 10 2 10 3 10 4 10 0 10 -1 10 -2 10 -3 10 -4 10 1 10 2 10 5 10 6 10 3 e a - illuminance (lx) i k - short circuit current (a) 0 400 600 800 1200 1400 1000 200 0.1 10 1 c - diode capacitance (pf) d 100 94 8473 e=0 f=1mhz v r - reverse voltage (v) 350 450 550 650 0 0.2 0.4 0.6 0.8 1.0 750 94 8477 v eye - wavelength (nm) s ( ) rel - relative spectral sensitivity 0.4 0.2 0 94 8475 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 s - relative sensitivity rel ? - angular displacement
BPW21R www.vishay.com vishay semiconductors rev. 1.7, 23-nov-11 4 document number: 81519 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters - + 5.08 nom. ? 8.13 ? 5.9 ? 0.45 - 1 0.2 0.1 - 0.05 + 0.02 0.1 chip position 0.1 9.1 issue:1; 01.07.96 drawing-no.: 6.511-5002.01-4 specifications according to din technical drawings (1.65) 14 3.1 96 12181
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