q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 absolute maximum ratings t c =25 e unless otherwise specified HFP9N80 / hfs9n80 800v n-channel mosfet oct 2016 parameter value unit bv dss 800 v i d 9a r ds(on), typ 1.2
qg ,typ 48 nc key parameters features symbol parameter to-220 to-220f unit v dss drain-source voltage 800 v i d drain current ? continuous (t c = 25 e ) 9.0 9.0 * a drain current ? continuous (t c = 100 e ) 5.7 5.7 * a i dm drain current ? pulsed (note 1) 36 36 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 860 mj i ar avalanche current (note 1) 9.0 a e ar repetitive avalanche energy (note 1) 17.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 178 59 w 1.42 0.48 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e symbol parameter to-220 to-220f unit r jc thermal resistance, junction-to-case, max. 0.7 2.1 e /w r cs thermal resistance, case-to-sink, typ. 0.5 -- e /w r ja thermal resistance, junction-to-ambient, max. 62.5 62.5 e /w * drain current limited by maximum junction temperature thermal resistance characteristics ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? 100% avalanche tested ? rohs compliant HFP9N80 to-220 hfs9n80 to-220f symbol g d s g d s
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=20mh, i as =9a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t j =25 e unless otherwise specified symbol parameter test conditions min typ max unit on characteristics v gs gate threshold voltage v ds = v gs , i d $ 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5 a -- 1.2 1.44 ? g fs forward transconductance v ds = 50 v i d = 4.5 a -- 5.5 -- s off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 $ 800 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 $ , referenced to25 e -- 0.93 -- v/ e i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 10 $ v ds = 640 v, t c = 125 e -- -- 100 $ i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 na dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1770 2300 pf c oss output capacitance -- 145 190 pf c rss reverse transfer capacitance -- 25 33 pf switching characteristics t d(on) turn-on time v ds = 400 v, i d = 9 a, r g = 25 ? (note 4,5) -- 45 100 ns t r turn-on rise time -- 38 86 ns t d(off) turn-off delay time -- 170 350 ns t f turn-off fall time -- 35 80 ns q g total gate charge v ds = 640 v, i d = 9 a, v gs = 10 v (note 4,5) -- 48 62 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 19 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9 a i sm maximum pulsed drain-source diode forward current -- -- 36 v sd drain-source diode forward voltage v gs = 0 v, i s = 9 a -- -- 1.4 v trr reverse recovery time v gs = 0 v, i s = 9 a di f /dt = 100 a/ v -- 690 -- ns qrr reverse recovery charge -- 8.2 -- &
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics typical characteristics 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 250us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 50v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 048121620 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) >
@ drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250us pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 102030405060 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v * note : i d = 9.0a v gs , gate-source voltage [v] q g , total gate charge [nc]
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-1. maximum safe operating area for to-220 figure 9-2. maximum safe operating area for to-220f figure 10. maximum drain current vs case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 ua bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 3 6 9 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 4.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 typical characteristics (continued) figure 11-1. transient thermal response curve for to-220 t 2 t 1 p dm figure 11-2. transient thermal response curve for to-220f t 2 t 1 p dm 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 2.1 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 0.7 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 package dimension 9.19 0.20 3 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ { v t y y w g
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 package dimension { v t y y w m g { v t y y w m t m t g pin hole
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