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april 2017 docid025600 rev 3 1 / 16 this is inf ormation on a product in full production. www.st.com STD35P6LLF6 p - channel 60 v, 0.025 typ., 35 a stripfet? f6 power mosfet in a dpak package datasheet - production data figure 1 : internal schematic diagram features order code v dss r ds(on) max. i d p tot STD35P6LLF6 60 v 0.028 35 a 70 w ? very low on - resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p - channel power mosfet developed using the stripfet? f6 technology, with a new trench gate structure. the resulting power mosfet exhibits v ery low r ds(on) in all packages. table 1: device summary order code marking package packaging STD35P6LLF6 35p6llf6 dpak tape and reel am 1 1258v1 d(2, t ab) s(3) g(1)
contents STD35P6LLF6 2 / 16 docid025600 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 dpak package information ................................ ............................. 10 4.2 packing information ................................ ................................ ......... 13 5 revision history ................................ ................................ ............ 15
STD35P6LLF6 electrical ratings docid025600 rev 3 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d drain current (continuous) at t c = 25 c 35 a i d drain current (continuous) at t c = 100 c 25 a i dm (1) drain current (pulsed) 140 a p tot total dissipation at t c = 25 c 70 w t stg storage temperature range - 55 to 175 c t j operating junction temperature range notes: (1) pulse width limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 2.14 c/w for the p - channel power mosfet, current polarity of voltages and current have to be reversed.
electrica l characteristics STD35P6LLF6 4 / 16 docid025600 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 250 a 60 v i dss zero gate voltage drain current v gs = 0 v, v ds = 60 v 1 a v gs = 0 v, v ds = 60 v, t c = 125 c (1) 10 a i gss gate - body leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 17.5 a 0.025 0.028 v gs = 4.5 v, i d = 17.5 a 0.03 0.036 notes: (1) defined by design, not subject to production test. table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 3780 - pf c oss output capacitance - 262 - pf c rss reverse transfer capacitance - 170 - pf q g total gate charge v dd = 30 v, i d = 35 a, v gs = 0 to 4.5 v (see figure 14: "gate charge test circuit" ) - 30 - nc q gs gate - source charge - 10.8 - nc q gd gate - drain charge - 10.5 - nc r g gate input resistance i d = 0 a, gate dc bias = 0 v, f = 1 mhz, magnitude of alternative signal = 20 mv - 1.7 - table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 17.5 a r g = 4.7 , v gs = 10 v (see figure 13: "switching times test circuit for resistive load" ) - 51.4 - ns t r rise time - 39 - ns t d(off) turn - off - delay time - 171 - ns t f fall time - 21 - ns for the p - channel power mosfet, current polarity of voltages and current have to be reversed.
STD35P6LLF6 electrical characteristics docid025600 rev 3 5 / 16 table 7: source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage v gs = 0 v, i sd = 35 a - 1.5 v t rr reverse recovery time i sd = 35 a, di/dt = 100 a/s, v dd = 48 v, (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 34 ns q rr reverse recovery charge - 48 nc i rrm reverse recovery current - 2.8 a notes: (1) pulse test: pulse duration = 300 s, duty cycle 1.5% for the p - channel power mosfet, current polarity of voltages and current have to be reversed.
electrical characteristics STD35P6LLF6 6 / 16 docid025600 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : outp ut characteristics figure 5 : transfer characteristics figure 6 : normalized gate threshold voltage vs temperature figure 7 : normalized v(br)dss vs temperature
STD35P6LLF6 electrical characteristics docid025600 rev 3 7 / 16 figure 8 : static drain - source on - resistance figure 9 : normalized on - resistance vs. temperature figure 10 : gate charge vs gate - source voltage figure 11 : capacitance variations voltage figure 12 : source - drain diode forward characteristics
test circuits STD35P6LLF6 8 / 16 docid025600 rev 3 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times
STD35P6LLF6 package information docid025600 rev 3 9 / 16 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STD35P6LLF6 10 / 16 docid025600 rev 3 4.1 dpak package information figure 16 : d pak (to - 252) type a2 package outline 0068772_type-a2_rev21
STD35P6LLF6 package information docid025600 rev 3 11 / 16 table 8: dpak (to - 252) type a2 mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
package information STD35P6LLF6 12 / 16 docid025600 rev 3 figure 17 : dpak (to - 252) type a2 recommended footprint (dimensions are in mm)
STD35P6LLF6 package information docid025600 rev 3 13 / 16 4.2 packing information figure 18 : dpak (to - 252) tape outline
package information STD35P6LLF6 14 / 16 docid025600 rev 3 figu re 19 : dpak (to - 252) reel outline table 9: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
STD35P6LLF6 revision history docid025600 rev 3 15 / 16 5 revision history table 10: document revision history date revision changes 11 - dec - 2013 1 first release. 24 - feb - 2015 2 in title description on cover page, changed 0.02 to 0.023 in features table on cover page, changed 0.028 to 0.026 updated table 2: absolute maximum ratings updated table 4: static C renamed table and updated static drainsource on - resistance values updated table 5: dynamic C test conditions and all typical values updated table 6: switching times C test conditions and all typical values updated table 7: source - drain diode C test conditions and all typical values added section 2.2: electrical characteristics (curves) updated section 4: package mechanical data minor text changes 03 - apr - 2017 3 updated v sd maximum value in table 7: "source drain diode" . updated section 4.1: "dpak package information" minor text changes.
STD35P6LLF6 16 / 16 docid025600 rev 3 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved

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