? semiconductor components industries, llc, 1998 october, 2016 ? rev. 3 1 publication order number: mmbt3416lt3/d mmbt3416lt3g general purpose amplifier npn silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v ebo 4.0 vdc collector current ? continuous i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. www.onsemi.com sot ? 23 (to ? 236) case 318 style 6 1 2 3 1 gp m marking diagram collector 3 1 base 2 emitter device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. mmbt3416lt3g sot ? 23 (pb ? free) 10,000/tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. gp = device code m = date code* = pb ? free package (note: microdot may be in either location)
mmbt3416lt3g www.onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc emitter ? base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v cb = 25 vdc, i e = 0) i cbo1 ? 100 nadc emitter cutoff current (v eb = 5.0 vdc, i c = 0) i ebo ? 100 nadc on characteristics dc current gain (i c = 2.0 madc, v ce = 4.5 vdc) h fe 75 225 ? collector ? emitter saturation voltage (i c = 50 madc, i b = 3.0 madc) v ce(sat) ? 0.3 vdc base ? emitter saturation voltage (i c = 50 madc, i b = 3.0 madc) v be(sat) 0.6 1.3 vdc small ? signal characteristics collector cutoff current (v cb = 18 vdc, t a = 100 c) i cbo2 ? 15 adc small ? signal current gain (i c = 2.0 madc, v ce = 4.0 vdc, f = 1 khz) h fe 75 ? ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. figure 1. turn ? on time figure 2. turn ? off time equivalent switching time test circuits *total shunt capacitance of test jig and connectors 10 k +3.0 v 275 c s < 4.0 pf* 10 k +3.0 v 275 c s < 4.0 p f 1n916 300 ns duty cycle = 2% +10.9 v -0.5 v <1.0 ns 10 < t 1 < 500 s duty cycle = 2% +10.9 v 0 -9.1 v < 1.0 ns t 1
mmbt3416lt3g www.onsemi.com 3 typical noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 3. noise voltage f, frequency (hz) 5.0 7.0 10 20 3.0 figure 4. noise current f, frequency (hz) 2.0 10 20 50 100 200 500 1k 2k 5k 10k 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 bandwidth = 1.0 hz r s = 0 i c = 1.0 ma 100 a e n , noise voltage (nv) i n , noise current (pa) 30 a bandwidth = 1.0 hz r s ? 10 a 300 a i c = 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1k 2k 5k 1 0 noise figure contours (v ce = 5.0 vdc, t a = 25 c) figure 5. narrow band, 100 hz i c , collector current ( a) 500k figure 6. narrow band, 1.0 khz i c , collector current ( a) 10 2.0 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 7. wideband i c , collector current ( a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the t ransistor referred to the input. (figure = noise current of the t ransistor referred to the input. (figure = boltzman?s constant (1.38 x 10 ? 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 3.0 db 4.0 db 6.0 db 10 db 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1 500k 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 1m 500k 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k bandwidth = 1.0 hz 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db
mmbt3416lt3g www.onsemi.com 4 typical static characteristics figure 8. dc current gain i c , collector current (ma) 400 0.004 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 9. collector saturation region i c , collector current (ma) 1.4 figure 10. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 mps390 4 figure 11. ?on? voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 mps3904- t j = 25 c i c = 1.0 ma 10 ma 100 ma figure 12. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 s duty cycle 2.0% i b = 500 a 400 a 300 a 200 a 100 a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 1.2 1.0 0.8 0.6 0.4 0.2 0 -2.4 0.8 0 -1.6 -0.8 1.0 2.0 5.0 10 20 50 1 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c)
mmbt3416lt3g www.onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 13. turn ? on time i c , collector current (ma) 300 figure 14. turn ? off time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 15. current ? gain ? bandwidth product i c , collector current (ma) figure 16. capacitance v r , reverse voltage (volts) figure 17. input impedance i c , collector current (ma) figure 18. output admittance i c , collector current (ma) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t h , output admittance ( mhos) oe h ie , input impedance (k ) 3.0 5.0 7.0 10 20 30 50 70 100 200 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 vdc t r 10 20 30 50 70 100 200 300 500 700 2.0 5.0 10 20 30 50 3.0 1.0 7.0 70 1 v cc = 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c f = 100 mhz v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.05 t j = 25 c f = 1.0 mhz c ib c ob 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 mps3904 h fe 200 @ i c = 1.0 ma v ce = 10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 1 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c mps3904 h fe 200 @ i c = 1.0 ma
mmbt3416lt3g www.onsemi.com 6 figure 19. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 10 0 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an ? 569) z ja(t) = r(t) r ja t j(pk) ? t a = p (pk) z ja(t) t 1 t 2 p (pk) figure 19a figure 19a. t j , junction temperature ( c) 10 4 -4 0 i c , collector current (na) figure 20. v ce , collector-emitter voltage (volts) 400 2.0 i c , collector current (ma) design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 19a. using the model and the device thermal response the normalized effective transient thermal resistance of figure 19 was calculated for various duty cycles. to find z ja(t) , multiply the value obtained from figure 19 by the steady state value r ja . example: the mps3904 is dissipating 2. 0 w peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (d = 0.2) using figure 19 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore t = r(t) x p (pk) x r ja = 0.22 x 2.0 x 200 = 88 c. for more information, see an ? 569. the safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 20 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 19. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 -2 10 -1 10 0 10 1 10 2 10 3 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 v cc = 30 vdc i ceo i cbo and i cex @ v be(off) = 3.0 vdc t a = 25 c current limit thermal limit second breakdown limit 1.0 ms 10 s t c = 25 c 1.0 s dc dc 4.0 6.0 10 20 40 60 100 200 4.0 6.0 8.0 10 20 40 t j = 150 c 100 s
mmbt3416lt3g www.onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbt3416lt3/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ?
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