esd protected 4000 v SI6966EDQ vishay siliconix document number: 70809 s-60704?rev. b, 23-nov-98 www.vishay.com 1 dual n-channel 2.5-v (g-s) mosfet, esd protected product summary v ds (v) r ds(on) ( ) i d (a) 0.030 @ v gs = 4.5 v 5.2 20 0.040 @ v gs = 2.5 v 4.5 SI6966EDQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view d 1 g 1 s 1 d 2 g 2 s 2 n-channel n-channel 100 100 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 gate-source voltage v gs 12 v a, b t a = 25 c 5.2 continuous drain current (t j = 150 c) a, b t a = 70 c i d 4.0 pulsed drain current i dm 30 a continuous source current (diode conduction) a, b i s 1.25 t a = 25 c 1.25 maximum power dissipation a, b t a = 70 c p d 0.72 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec r thja 110 maximum junction-to-ambient a steady state r thja 115 c/w notes a. surface mounted on fr4 board. b. t = 10 sec.
SI6966EDQ vishay siliconix www.vishay.com 2 document number: 70809 s-60704 ? rev. b, 23-nov-98 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 100 na v ds = +20 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 25 a on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 30 a v gs = 4.5 v, i d = 5.2 a 0.021 0.030 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 4.5 a 0.028 0.040 forward transconductance a g fs v ds = 10 v, i d = 5.2 a 20 s diode forward voltage a v sd i s = 1.25 a, v gs = 0 v 0.65 1.2 v dynamic b total gate charge q g 15 25 gate-source charge q gs v ds = 15 v, v gs = 4.5v, i d = 5.2 a 2.5 nc gate-drain charge q gd 4.5 turn-on delay time t d(on) 100 200 rise time t r v dd = 10 v, r l = 10 130 250 turn-off delay time t d(off) v dd = 10 v, r l = 10 i d 1 a, v gen = 4.5 v, r g = 6 420 800 ns fall time t f 220 450 source-drain reverse recovery time t rr i f = 1.25 a, di/dt = 100 a/ s 210 500 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6966EDQ vishay siliconix document number: 70809 s-60704 ? rev. b, 23-nov-98 www.vishay.com 3 typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.00 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 0 6 12 18 24 30 0246810 0.0 0.9 1.8 2.7 3.6 4.5 0 3 6 9 12 15 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0 300 600 900 1200 048121620 v gs = 4.5 thru 3 v 25 c t c = 125 c c rss c oss c iss v ds = 15 v i d = 5.2 a v gs = 4.5 v i d = 5.2 a v gs = 4.5 v v gs = 2.5 v 2 v -55 c 1.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 2.5 v
SI6966EDQ vishay siliconix www.vishay.com 4 document number: 70809 s-60704 ? rev. b, 23-nov-98 typical characteristics (25 c unless noted) -0.6 -0.4 -0.2 -0.0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.02 0.04 0.06 0.08 123456 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 1 10 30 i d = 5.2 a duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 0 1 25 30 5 15 10 30 1. duty cycle, d = 2. per unit base = r thja = 115 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.1 0 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j - temperature ( c) power (w) source-drain diode forward voltage on-resistance vs. gate-to-source voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s time (sec) 10 20 10
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