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  p p jl9458al july 10 ,201 5 - rev.00 page 1 10 0 v n - c ha nnel enhancement mode mosfet voltage 10 0 v current 7 .0 a sop - 8 f eatures ? r ds(on) , v gs @ 10 v , id @ 7. 0 a< 2 5 m ? ? r ds(on) , v gs @ 4.5 v , id@ 5.0 a< 28 .5 m ? ? advanced trench process technology ? high density cell design for ultra low on - resistance ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: sop - 8 package ? terminal s: solderable per mil - std - 750, method 2026 ? approx. weight: 0.0029 ounces, 0.083 grams ? marking: l 94 58al parameter symbol limit units drain - source voltage v ds 10 0 v gate - source voltage v gs + 2 0 v continuous drain current t a =25 o c i d 7.0 a t a = 70 o c 5.6 pulsed drain current (note 1 ) i dm 28 a power dissipation t a =25 o c p d 2.5 w t a = 70 o c 1.6 single pulse avalanche energy (note 5 ) e as 8.5 mj operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient , t Q (note 6 ) r ja 50 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p jl9458al july 10 ,201 5 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source br eakdown voltage bv dss v gs = 0 v,i d = 25 0ua 10 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1.0 1.8 2 .5 v drain - source on - state resistance r ds(on) v gs = 10 v,i d = 7.0 a - 20 25 m ds(on) v gs = 4.5 v,i d = 5.0 a - 2 2 28 .5 m dss v ds =80 v,v gs =0v - - 1.0 u a gate - source leakage current i gss v gs = + 20 v,v ds =0v - - + 100 n a dynamic (note 7 ) total gate charge q g v ds = 5 0 v, i d = 7. 0 a, v gs = 10 v (note 1,2 ) - 31 - nc gate - source charge q gs - 5.1 - gate - drain charge q gd - 7.3 - input capacitance ciss v ds = 30 v, v gs = 0 v, f=1.0mhz - 1 519 - pf output capacitance coss - 132 - reverse transfer capacitance crss - 6 6 - turn - on delay time t d (on) v dd = 5 0 v, i d = 7. 0 a, v g s = 10 v, r g = 3 (note 1,2 ) - 1 1 - ns turn - on rise time tr - 42 - turn - o ff delay time t d (off) - 40 - turn - o ff fall time tf - 1 9 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 7. 0 a diode forward voltage v sd i s = 1 . 0 a, v gs = 0 v - 0. 7 1. 2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. the maximum current rating is package limited. 4. repetitive rating, pulse width limited by junction temperature tj(max)=150c . ratings are based on low frequency and duty cycles to keep initial tj =25c. 5. the test condition is l=0.1mh, i as = 13 a , v dd =50v, v gs =10v 6. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch 2 with 2oz. square pad of copper . 7. guaranteed by design, not subjec t to production testing.
p p jl9458al july 10 ,201 5 - rev.00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance va riation with vgs. fig. 6 body d i ode characteristics
p p jl9458al july 10 ,201 5 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature . fig. 10 c apacitance vs. drain - source voltage . fig. 11 maximum safe operating area
p p jl9458al july 10 ,201 5 - rev.00 page 5 t ypical characteristic curves fig. 12 normalized transient thermal impedance vs. pulse width
p p jl9458al july 10 ,201 5 - rev.00 page 6 p art n o packing code v ersion packaging info rmation & mounting pad layout sop - 8 dimension u nit: mm sop - 8 pad latout u nit: mm p art n o packing c ode package type packing type marking ver sion pj l94 58al _r2 _00001 sop - 8 2.5 k pcs / 13
p p jl9458al july 10 ,201 5 - rev.00 page 7 disclaimer


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DigiKey

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PJL9458AL_R2_00001
3757-PJL9458AL_R2_00001CT-ND
PanJit Group 100V N-CHANNEL ENHANCEMENT MODE 25000: USD0.26775
12500: USD0.27043
5000: USD0.29206
2500: USD0.30829
1: USD0.81
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Mouser Electronics

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PJL9458AL_R2_00001
241-PJL9458ALR200001
PanJit Semiconductor MOSFET 100V N-Channel Enhancement Mode MOSFET 2500: USD0.302
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Ozdisan Elektronik

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PJL9458AL_R2_00001
PanJit Group MOSFET DIS.7A 100V N-CH SOP-8 SMT 2500: USD0.6011
1: USD0.69126
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