20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 2SB1382 description ? collector-emitter breakdown voltage- :v(br)ceo=-120v(min) ? high dc current gain- : hfe= 2000( min.) @(lc= -8a, vce= -4v) ? low collector saturation voltage- : vce lor anv errors or oinis>ion> discovered m its i"ise. xi si-mi-cmidiiciors cnculirajics cu-.lonici> lo \crils llilit dalavhecn .hv vimx-nt hclore placing orders. qualify .'semi-conductors
silicon pnp darlington power transistor 2SB1382 electrical characteristics tj'25'c unless otherwise specified symbol v(br)ceo vce(sat) vaf(sat) icbo iebo hfe cob fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage ?? base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc=-10ma; ib= 0 lc=-8a; lb=-16ma lc=-8a, !b=-16nna vcb=-120v; ie=0 veb= -6v; lc= 0 lc= -8a ; vce= -4v leso;vcb=-10v;ftest=1mhz le=1a;vce=-12v min -120 2000 typ. % 350 50 max -1.5 -2.5 -10 -10 unit v v v ma ma pf mhz switching times ton tslg tf turn-on time storage time fall time vcc- -40v, rl= 50 , lc= -8a; !bi= -ie2= -16ma, 0.8 1.8 1.0 u s u s u s
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