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| dated : 16/03/2015 rev:01 ? semtech electronics ltd. MMBD172SE silicon epitaxial planar diode for vhf~uhf band rf attenuator applications absolute maximum ratings (t a = 25 o c) parameter symbol value unit reverse voltage v r 50 v forward current i f 50 ma junction temperature t j 125 o c storage temperature range t stg - 55 to + 125 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit forward voltage at i f = 10 ma v f - - 1 v reverse voltage at i r = 10 a v r 50 - - v reverse current at v r = 50 v i r - - 0.1 a total capacitance at v r = 50 v, f = 1 mhz c t - 0.25 - pf series resistance 1) at i f = 10 ma, f = 100 mhz r s - 7 - ? 1) c t is measured by 3 terminal method with capacitance bridge. 3 1 2 marking code: fp to-236 plastic package
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