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飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
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| Part No. |
MCM63R918FC4.0R MCM63R836FC3.3R MCM63R836FC4.0 MCM63R918FC3.7R MCM63R836FC4.0R MCM63R836FC3.0 MCM63R836FC3.0R MCM63R918FC3.3R MCM63R918FC3.0R MCM63R836FC3.7R
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| OCR Text |
... write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applicat...3P, 5P, 3R 4A, 1B, 2B, 4B, 7B, 1C, 7C, 4G, 4H, 1R, 7R, 1T, 2T, 6T, 6U Symbol CK CK DQx Type Input In... |
| Description |
MCM63R836 MCM63R836
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| File Size |
356.55K /
21 Page |
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Samsung semiconductor
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| Part No. |
K7K1636U2C K7K1618U2C
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| OCR Text |
...OCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS...3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,... |
| Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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| File Size |
415.85K /
19 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7I641884M-CI25 K7I641884M-CE30 K7I641884M-CE25 K7I641884M-FECI25 K7I641884M-FECI30 K7I641884M-FE30 K7I643684M-EC25 K7I641884M-FE25 K7I643684M-EC30 K7I643684M-FECI25 K7I643684M-FECI30 K7I643684M-FC30 K7I643684M-FC20 K7I641884M-FC20 K7I643684M-FC25 K7I643684M-FC16 K7I643684M-FCI16 K7I641884M-FC16 K7I641884M-FCI16 K7I643684M-FI20
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| OCR Text |
...OCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS...3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,... |
| Description |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
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| File Size |
416.16K /
18 Page |
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
71256T36-67 71256T36-75 GVT71256T18 71256T36-10 7C1359A-133 7C1359A-150 7C1359A-166 7C1359A-100 CY7C1359A-133AC GVT71256T18T-6 CY7C1359A-100AC
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| OCR Text |
...nsion (one cycle chip deselect to eliminate bus contention) 3.3v ?5% and +10% core power supply 2.5v or 3.3v i/o supply 5v tolerant i...3p, 5p 5, 10, 17, 21, 26, 40, 55, 60, 67, 71, 76, 90 v ss ground ground: gnd 1a, 7a, 1f, 7f, 1j, ... |
| Description |
256K x 18 Synchronous-Pipelined Cache Tag RAM 256 × 18的同步高速缓存标记内存流水线
256K x 18 Synchronous-Pipelined Cache Tag RAM 256K X 18 CACHE TAG SRAM, 3.5 ns, PQFP100
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| File Size |
238.08K /
24 Page |
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Motorola, Inc
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| Part No. |
MCM69R738CZP4.4R MCM69R820CZP4.4R MCM69R738CZP4R MCM69R738CZP5 MCM69R738CZP5R MCM69R738CZP6 MCM69R738CZP6R
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| OCR Text |
... write fast static ram designed to provide high performance in secondary cache and atm switch, telecom, and other high speed memory applicat...3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 6b, 7b, 1c, 7c, 4d, 4g, 4h, 3j, 5j, 1r, 7r, 1t, 2t, 6... |
| Description |
4M Late Write 2.5 V I/O
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| File Size |
511.38K /
20 Page |
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Motorola, Inc
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| Part No. |
MCM69R818CZP4.4 MCM69R736CZP4.4 MCM69R736CZP4.4R MCM69R818CZP4.4R MCM69R736CZP5 MCM69R736CZP6 MCM69R736CZP4R MCM69R736CZP6R MCM69R736CZP5R MCM69R818CZP5R MCM69R818CZP4R MCM69R818CZP6R
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| OCR Text |
... write fast static ram designed to provide high performance in secondary cache and atm switch, telecom, and other high speed memory applicat...3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 6b, 7b, 1c, 7c, 4g, 4h, 1r, 7r, 1t, 2t, 6t, 6u nc e n... |
| Description |
4M Late Write HSTL
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| File Size |
520.51K /
20 Page |
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it Online |
Download Datasheet |
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