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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R640982M K7R643682M K7R641882M
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| OCR Text |
...ics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on ...3P,1B,2C,1E,1F,2J,1K,1L,2M,1P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F... |
| Description |
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
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| File Size |
362.84K /
19 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K7R161882B K7R163682B K7R160982B
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| OCR Text |
...0MHz speed bin From 250 230 210 To 280 260 240 Oct. 31, 2003 Nov. 28, 2003 Final Final Draft Date Oct. 17, 2002 Dec. 16, 2002 Remark Advance...3P,1B,2C,1E,1F,2J,1K,1L,2M,1P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F... |
| Description |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
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| File Size |
425.70K /
19 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
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| Part No. |
BS170D26Z BS170D27Z
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| OCR Text |
...ese products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. they can be ...3p 3p 3p 3p f63tnr lab el cus tomized lab el e mbosse d carri er tape antis tatic cover tape packagi... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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| File Size |
1,301.57K /
14 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FC30 K7R323682C-FCI20 K7R323682C-FCI25 K7R323682C-FCI30 K7R323682C-FEC20 K7R323682C-FEC25
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| OCR Text |
...OCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS...3P,1B,2C,1E,1F,2J,1K,1L,2M,1P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F... |
| Description |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
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| File Size |
455.05K /
20 Page |
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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS61DDPB24M18-375M3
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| OCR Text |
...erations are self-timed. refer to the timing reference diagram for truth tabl e on page 8 f or a description of the basi c opera-...3p 2b, 3c, 2d, 2f, 2g, 3j, 2l, 3m, 2n 2m x 36 dq pins dq0?dq8 dq9?dq17 11p, 10m, 11l, 11k, 10j, 11f,... |
| Description |
4M X 18 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
590.16K /
24 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K7Q323682MK7Q321882M
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| OCR Text |
...ics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on...3p data outputs w 4a write control r 8a read control bw 0 , bw 1 7b, 5a byte write control v ref 2h... |
| Description |
1Mx36-bit, 2Mx18-bit QDRSRAM Data Sheet
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| File Size |
441.24K /
17 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K7Q161862 K7Q161862B K7Q163662B
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| OCR Text |
...ics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on ...3P 4A 8A 7B, 5A 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4... |
| Description |
512Kx36 & 1Mx18 QDRTM b2 SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
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| File Size |
333.83K /
17 Page |
View
it Online |
Download Datasheet |
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