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2SA1576 D22012LP KSD07J 13448 D22012LP 05100 CU4032 AP512
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    MAXIM - Dallas Semiconductor
Part No. MAX2691
OCR Text ...anced sige process, the device achieves high gain and low noise figure while maximizing the input-referred 1db compression point and the 3rd-order intercept point. the max2691 provides a high gain of 17.5db and sub 1db noise figure. ...
Description L2 Band GPS Low-Noise Amplifier

File Size 128.87K  /  7 Page

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    MURATA MANUFACTURING CO LTD
Part No. NFL21SP106X1C3
OCR Text ...y capacitance of inductor, achieves high performance in noise suppression in high frequency range. 4. five different values of cut off frequency are available, ranging from 100mhz up to 500mhz. 5. no polarity using the same s...
Description On-Board Type (DC) EMI Suppression Filters (EMIFIL)

File Size 48.28K  /  3 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM51V4256A
OCR Text ...mos technology. the msm51v4256a achieves high integration, high-speed operation, and low-power consumption because oki manufactures the device in a quadruple-layer polysilicon/single-layer metal cmos process. the msm51v4256a is available in...
Description 262,144-Word ??4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

File Size 245.33K  /  17 Page

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    ADP150UJZ-REDYKIT ADP150AUJZ-2.65-R7

Analog Devices
Part No. ADP150UJZ-REDYKIT ADP150AUJZ-2.65-R7
OCR Text ...ve circuit topology, the adp150 achieves ultralow noise performance without the necessity of an additional noise bypass capacitor, making it ideal for noise sensitive analog and rf applications. the adp150 also achieves ultralow noise p...
Description Ultralow Noise, 150 mA CMOS Linear Regulator

File Size 607.71K  /  20 Page

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    HI-3582PQTF-10 HI-3583PQTF-10 HI-3582PQIF-10 HI-3583PQIF-10 HI-3583CJMF-10 HI-3582CJMF-10 HI-3583PCIF-10 HI-3582PCIF-10

Holt Integrated Circuits
Holt Integrated Circuit...
Part No. HI-3582PQTF-10 HI-3583PQTF-10 HI-3582PQIF-10 HI-3583PQIF-10 HI-3583CJMF-10 HI-3582CJMF-10 HI-3583PCIF-10 HI-3582PCIF-10 HI-3582PCMF-10 HI-3583PCMF-10 HI-3582CJIF-10
OCR Text ...arasitic crosstalk, and thereby achieves the same isolation as common hybrid layouts. hi-3582pqi hi-3582pqt hi-3582pqm & hi-3583pqi hi-3583pqt hi-3583pqm 52 - 51 - rin2b 50 - rin2a 49 - rin1b 48 - rin1a 47 - vdd 46 - n/c 45 - test 44 - 43 -...
Description ARINC 429 3.3V Terminal IC
   ARINC 429 3.3V Terminal IC

File Size 124.40K  /  18 Page

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    OKI ELECTRIC INDUSTRY CO LTD
Part No. MSM512200-80SJ
OCR Text ...mos technology. the msm512200/l achieves high integration, high-speed operation, and low-power consumption because oki manufactures the device in a quadruple-layer polysilicon/single-layer metal cmos process. the msm512200/l is available in...
Description 1M X 2 FAST PAGE DRAM, 80 ns, PDSO20

File Size 473.58K  /  17 Page

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    OKI ELECTRIC INDUSTRY CO LTD
Part No. MSM512100-80SJ
OCR Text ...mos technology. the msm512100/l achieves high integration, high-speed operation, and low-power consumption because oki manufactures the device in a quadruple-layer polysilicon/single-layer metal cmos process. the msm512100/l is available in...
Description 2M X 1 FAST PAGE DRAM, 80 ns, PDSO20

File Size 248.67K  /  16 Page

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