Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BD48HW0G-CTR BD48HW0G-CTR |
ROHM Semiconductor |
Supervisory Circuits OUTPUT SUPERVISORY IC |
3000: USD0.693 6000: USD0.668 15000: USD0.644
|
3000 |
YQ10RSM10SDTL1 YQ10RSM10SDTL1 |
ROHM Semiconductor |
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp |
|
0 |
YQ20BM10SDFHTL YQ20BM10SDFHTL |
ROHM Semiconductor |
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati |
2500: USD0.581 5000: USD0.555 10000: USD0.54
|
0 |
YQ20NL10CDTL YQ20NL10CDTL |
ROHM Semiconductor |
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe |
1000: USD0.92 2000: USD0.88 5000: USD0.85 10000: USD0.83
|
0 |
YQ20NL10SEFHTL YQ20NL10SEFHTL |
ROHM Semiconductor |
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat |
1000: USD0.92 2000: USD0.88 5000: USD0.85 10000: USD0.83
|
0 |