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  900v 5a Datasheet PDF File

For 900v 5a Found Datasheets File :: 334    Search Time::2.969ms    
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    FS3VS-16A

Mitsubishi Electric Semiconductor
Part No. FS3VS-16A
OCR Text .................................. 900v rDS (ON) (MAX) ................................................................ 4.0 ID ...................5a, VGS = 10V ID = 1.5a, VGS = 10V ID = 1.5a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min....
Description HIGH-SPEED SWITCHING USE

File Size 50.84K  /  4 Page

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    AP09N90W

Advanced Power Electronics Corp.
Part No. AP09N90W
OCR Text ...FET D BVDSS RDS(ON) ID 900v 1.2 8.6A G S Description AP09N90 series are specially designed as main switching devices for uni...5a VDS=VGS, ID=250uA VDS=10V, ID=4.5a VDS=900v, VGS=0V VDS=720V, VGS=0V VGS= 30V ID=8.6A VDS=540V V...
Description N-CHANNEL ENHANCEMENT MODE

File Size 71.29K  /  4 Page

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    BUL742C

Inchange Semiconductor Company Limited
Part No. BUL742C
OCR Text ...= 0.2A IC= 2.5a; IB= 0.8A VCES= 900v; VEB=0 VCES= 900v; VEB=0,TC= 150 MIN 400 11 BUL742C TYP. MAX UNIT V V 0.2 0.4 1.0 1.2 10 200 V V V V A Output Capacitance w ww scs .i IC= 10mA; VCE= 2V IC= 0.8A; VCE= 2V ...
Description Silicon NPN Power Transistor

File Size 213.31K  /  2 Page

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    2SK3678-01

Fuji Electric
Part No. 2SK3678-01
OCR Text ...Vcc < BVDSS, Tch < 150C *4 VDS< 900v = = = = C C *2 Tch <150C = *5 VGS=-30V Electrical characteristics (Tc =25C unless otherwise speci...5a VGS=10V ID=4.5a VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=4.5a VGS=10V RGS=10 VCC=450V ID=9A VGS...
Description N-CHANNEL SILICON POWER MOSFET

File Size 115.69K  /  4 Page

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    FMR11N90E

Fuji Electric
Part No. FMR11N90E
OCR Text ...ltage drain current i dss v ds =900v, v gs =0v t ch =25c - - 25 a v ds =720v, v gs =0v t ch =125c - - 250 gate-source leakage current i g s...5a, v gs =10v - 0.83 1.0 ? forward transconductance g fs i d =5.5a, v ds =25v 6.5 13 - s input capac...
Description N-CHANNEL SILICON POWER MOSFET

File Size 408.26K  /  5 Page

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    Panasonic, Corp.
Part No. 2SC3978A
OCR Text ...on t stg t f conditions v cb = 900v, i e = 0 v cb = 1000v, i e = 0 v eb = 7v, i c = 0 i c = 10ma, i b = 0 v ce = 5v, i c = 0.1a v ce = 5v, i c = 0.5a i c = 0.5a, i b = 0.1a i c = 0.5a, i b = 0.1a v ce = 10v, i c = 0.1a, f ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 2 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220F

File Size 171.47K  /  4 Page

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    2SC3978 2SC3978A

Panasonic Semiconductor
Part No. 2SC3978 2SC3978A
OCR Text ...fT ton tstg tf Conditions VCB = 900v, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5a IC = 0.5a, IB = 0.1A IC = 0.5a, IB = 0.1A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.5a, IB1 = 0.1A, IB2 ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.59K  /  3 Page

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    FMH11N90E

Fuji Electric
Part No. FMH11N90E
OCR Text ...ltage drain current i dss v ds =900v, v gs =0v t ch =25c - - 25 a v ds =720v, v gs =0v t ch =125c - - 250 gate-source leakage current i g s...5a, v gs =10v - 0.83 1.0 ? forward transconductance g fs i d =5.5a, v ds =25v 6.5 13 - s input capac...
Description N-CHANNEL SILICON POWER MOSFET

File Size 421.49K  /  5 Page

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    STW6NC90Z

STMICROELECTRONICS
Part No. STW6NC90Z
OCR Text 900v - 2.1 w - 5.2a to-247 zener-protected powermesh ? iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt capability n gate-to-s...5a 2.1 2.5 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 5.2 a symbol param...
Description 5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 89.43K  /  8 Page

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For 900v 5a Found Datasheets File :: 334    Search Time::2.969ms    
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