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  900v 5a Datasheet PDF File

For 900v 5a Found Datasheets File :: 332    Search Time::1.563ms    
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    FS20UMA-5A

Powerex Power Semiconductors
Part No. FS20UMA-5a
OCR Text .................................. 900v rDS (ON) (MAX) ................................................................ 4.0 ID ...................5a, VGS = 10V ID = 1.5a, VGS = 10V ID = 1.5a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min....
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 39.54K  /  4 Page

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    FUJI[Fuji Electric]
Part No. 2SK2526-01
OCR Text ...che Proof N-channel MOS-FET 900v 3,6 5a 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ...
Description N-channel MOS-FET

File Size 167.90K  /  2 Page

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    ST Microelectronics
Part No. P5NC90
OCR Text 900v - 2.1 w - 4.6a to-220/fp/d2pak/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt and capab...5a 5.6 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 1840 pf c oss output capacitance 116 pf c ...
Description Search --To STP5NC90

File Size 443.28K  /  13 Page

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    2SK2526-01

Fuji Electric
Part No. 2SK2526-01
OCR Text ...che Proof N-channel MOS-FET 900v 3,6 5a 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ...
Description N-channel MOS-FET

File Size 173.72K  /  3 Page

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    APT25GP90BDQ1G APT25GP90BDQ1

Advanced Power Technology
Part No. APT25GP90BDQ1G APT25GP90BDQ1
OCR Text 900v *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT (R) TO -2 47 The POWER MOS 7(R) IGBT is a new generat...5a IC = 12.5a 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gat...
Description POWER MOS 7 IGBT

File Size 439.54K  /  9 Page

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    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46GA90JD40
OCR Text 900v High Speed PT IGBT (R) E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through ...5a IC = 94A IC = 94A IC = 47A 2 1 IC = 23.5a VGE = 15V. 250s PULSE TEST <0.5 % DUTY ...
Description High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT

File Size 235.94K  /  9 Page

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    TSM3N9014 TSM3N90CHC5G TSM3N90CZC0 TSM3N90CPROG TSM3N90CIC0G

Taiwan Semiconductor Company, Ltd
Part No. TSM3N9014 TSM3N90CHC5G TSM3N90CZC0 TSM3N90CPROG TSM3N90CIC0G
OCR Text 900v n-channel power mosfet 1/12 ...5a, v gs = 10v q g -- 17 -- nc gate-source charge q gs -- 2.4 -- gate-drain charg...
Description 900v N-Channel Power MOSFET
800V N-Channel Power MOSFET

File Size 545.11K  /  12 Page

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    APT43GA90BD30

Microsemi Corporation
Part No. APT43GA90BD30
OCR Text 900v High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon...5a 1 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 25a IC = 12.5a IC = 25a 6 8 ...
Description High Speed PT IGBT

File Size 231.67K  /  9 Page

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    APT43GA90B APT43GA90S

Microsemi Corporation
Part No. APT43GA90B APT43GA90S
OCR Text 900v High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon...5a 1 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 25a IC = 12.5a IC = 25a 6 8 ...
Description High Speed PT IGBT

File Size 212.72K  /  6 Page

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    Socay Electornics Co., Ltd.
Part No. UN3E5-150L UN3E5-230L UN3E5-150LM UN3E5-230LM UN3E5-230LSMD UN3E5-250LM UN3E5-250LSMD
OCR Text ...on 300l 300v 20% 800v 900v 1 g (at 100v) 1.5pf ~20v 5ka 10ka 5a 200a un3e5-350lm un3e5-350l un3e5-350lsmd union 350l 350v 20% 800v 900v 1 g (at 100v) 1.5pf ~20v 5ka 10ka 5a 200a ...
Description 3-Electrode Gas Discharge Tube (GDT)

File Size 438.05K  /  4 Page

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For 900v 5a Found Datasheets File :: 332    Search Time::1.563ms    
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