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				OKI SEMICONDUCTOR CO., LTD.
Part No.	MD51V64800
OCR Text	...cmos technology. the md51v64800 achieves high integration, high-speed operation, and low-power consumption because oki manufactures the device in a quadruple-layer polysilicon/double-layer metal cmos process. the md51v64800 is available in...
Description	8M×8 Dynamic RAM(8M×8动态RAM) 8米8动态RAM米8动态内存）
File Size	432.31K / 15 Page	View it Online	Download Datasheet

				Sanken electric
Part No.	STRW6734 STRW6735
OCR Text	...contro ller ic, the product achieves high efficiency and low noise power supply systems by th e quasi-resonant operation and the bottom-skip quasi-resonant operation. the str-x6700 series products are the different p...
Description	(STR-W6700 Series) Power IC
File Size	103.64K / 2 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TC55VD818FFI-133
OCR Text	... care. 2. the stop clk mode achieves low-power standby by stopping the input clock. 3. the snooze mode achieves low-power standby by asserting the zz pin. 4. the cycle immediately prior to a snooze brought about by the zz pin must b...
Description	524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
File Size	571.19K / 21 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd.
Part No.	KMM372F213CS KMM372F213CK KMM372F1600BK
OCR Text	...es the time at which the output achieves the open circuit condition and is not referenced to v oh or v ol . t wcs , t rwd , t cwd and t awd are non restrictive operating parameter. they are included in the data sheet as electrical cha...
Description	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
File Size	456.86K / 20 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM51V65805
OCR Text	...mos technology. the msm51v65805 achieves high integration, high-speed operation, and low-power consumption because oki manufactures the device in a quadruple-layer polysilicon/double-layer metal cmos process. the msm51v65805 is available in...
Description	8M×8 Dynamic RAM(8M×8动态RAM) 8米8动态RAM米8动态内存）
File Size	661.31K / 15 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	AD22151
OCR Text	...t supply operation, the ad22151 achieves low drift offset and gain op- eration over ?0 c to +150 c. temperature compensation can accommodate a number of magnetic materials commonly uti- lized in economic position sensor assemblies. the tr...
Description	Linear Output Magnetic Field Transducer
File Size	112.84K / 8 Page	View it Online	Download Datasheet

				Analog Devices, Inc.
Part No.	AD22151G AD22151YRZ-RL AD22151YR-REEL
OCR Text	...v supply operation, the ad22151 achieves low drift offset and gain op eration over ?0 c to +150 c. temperature compensa- tion can accommodate a number of magnetic materials commonly utilized in economic position sensor assemblies. the tra...
Description	Linear Output Magnetic Field Sensor MAGNETIC FIELD SENSOR-HALL EFFECT, -60-60mT, 0.45-5.40V, RECTANGULAR, SURFACE MOUNT MS-012AA, SOIC-8 Linear Output Magnetic Field Transducer
File Size	195.15K / 8 Page	View it Online	Download Datasheet

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