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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-FC16
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| OCR Text |
...ics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on...3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs w 4a write control pin,active when low r 8a read control ... |
| Description |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
197.54K /
18 Page |
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Motorola, Inc.
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| Part No. |
MCM63R918 MCM63R836
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| OCR Text |
... write fast static ram designed to provide high performance in secondary cache and atm switch, telecom, and other high speed memory applicat...3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 7b, 1c, 7c, 4g, 4h, 1r, 7r, 1t, 2t, 6t, 6u nc e no co... |
| Description |
8MBit Synchronous Late Write Fast Static RAM(8M位同步迟写快速静态RAM)
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| File Size |
258.12K /
21 Page |
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it Online |
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Samsung semiconductor
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| Part No. |
K7J323682C K7J321882C
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| OCR Text |
... electronics reserves the right to c hange products or specification without notice. information in this document is provided in relation t...3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs r/w 4a read, write control pin, read active when high ld... |
| Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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| File Size |
410.17K /
18 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7Q163664B-FC16 K7Q161864B-FC16
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| OCR Text |
...ics co., ltd. reserve the right to change the specifications. samsung electronics will evaluate and reply to your requests and questions on...3p data outputs w 4a write control r 8a read control bw 0 , bw 1 7b, 5a byte write control v ref 2h,... |
| Description |
512Kx36 & 1Mx18 QDR TM b4 SRAM
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| File Size |
347.73K /
17 Page |
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it Online |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61DDB21M36-250M3 IS61DDB22M18-250M3
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| OCR Text |
...erations are self-timed. refer to the timing reference diagram for truth table on page 8 for a description of the basic opera- tio...3p 2b, 3c, 2d, 2f, 2g, 3j, 2l, 3m, 2n 1m x 36 dq pins dq0?dq8 dq9?dq17 11p, 10m, 11l, 11k, 10j, 11f,... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
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| File Size |
414.47K /
25 Page |
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it Online |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61DDB41M36-250M3 IS61DDB42M18-250M3
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| OCR Text |
...perations are self-timed. refer to the timing reference diagram for truth table on p.8 for a description of the basic operations of these d...3p 2b, 3c, 2d, 2f, 2g, 3j, 2l, 3m, 2n 1m x 36 dq pins dq0 ? dq8 dq9 ? dq17 11p, 10m, 11l, 11k, 10j, ... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
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| File Size |
453.63K /
26 Page |
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it Online |
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Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
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| Part No. |
MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R736AZP8R MCM69R736AZP6
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| OCR Text |
... write fast static ram designed to provide high performance in secondary cache and atm switch, telecom, and other high speed memory applicat...3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 6b, 7b, 1c, 7c, 4g, 4h, 1r, 7r, 1t, 2t, 6t, 6u nc e n... |
| Description |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
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| File Size |
229.07K /
20 Page |
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it Online |
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Motorola, Inc
Motorola Mobility Holdings, Inc.
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| Part No. |
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R819AZP7 MCM69R737AZP5 MCM69R737AZP6 MCM69R737AZP7R MCM69R737AZP8 MCM69R737A
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| OCR Text |
... write fast static ram designed to provide high performance in secondary cache and atm switch, telecom, and other high speed memory applicat...3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 6b, 7b, 1c, 7c, 4d, 4g, 4h, 3j, 5j, 1r, 7r, 1t, 2t, 6... |
| Description |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
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| File Size |
217.09K /
20 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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