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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS2VS-14A
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| OCR Text |
.................................. 2a
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, po...700v, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
44.10K /
4 Page |
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Supertex, Inc.
SUTEX[Supertex, Inc]
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| Part No. |
GN2470K4 GN2470
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| OCR Text |
...= 3A, VGE = 13V VCE = 25V, IC = 2a VGE = 0V, VCE =600V VGE = +/-20V, VCE =0V VGE = 10V, VCE = 25V VCC = 25V RGEN = 25 RL = 11 VCE = 25V VGE = 0V f = 1MHz
Rev.B - 4-22-04
3.5 5.0 100 100 15.0 600 50 12000 150 25 5
V V mho uA nA A ns n... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
220.66K /
8 Page |
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it Online |
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HI-SINCERITY MICROELECTRONICS, CORP.
HSMC[Hi-Sincerity Mocroelectronics]
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| Part No. |
HLB125HE
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| OCR Text |
...BE(off)=1.5V IC=1A, IB=200mA IC=2a, IB=500mA IC=4A, IB=1A IC=1A, IB=200mA IC=2a, IB=500mA IC=2a, VCE=5V
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions IC=1mA, VBE(off)=1.5V
HLB125HE
HSMC Product Specification
HI-S... |
| Description |
NPN EPITAXIAL PLANAR TRANSISTOR 瑞展晶体
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| File Size |
48.96K /
5 Page |
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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
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| Part No. |
MAX8508ETE MAX8506 MAX8506ETE MAX8507ETE
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| OCR Text |
.................................3.2a Output Short-Circuit Duration.....................................Continuous Continuous Power Dissipation...700v, IOUT = 0 to 600mA (MAX8507) VREFIN = 0.375V, IOUT = 0 to 30mA (MAX8507) OUT Input Resistance R... |
| Description |
PWM Step-Down DC-DC Converters with 75m Bypass FET for WCDMA and cdmaOne Handsets
PWM Step-Down DC-DC Converters with 75mohm Bypass FET for WCDMA and cdmaOne Handsets
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| File Size |
382.15K /
12 Page |
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it Online |
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??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
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| Part No. |
MJE13003L-X-TA3-F-T MJE13003 MJE13003-TO-220 MJE13003-X-TA3-F-T
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| OCR Text |
...L
VCC=125V, IC=1A, IB1=IB2=0.2a, tP=25 s, Duty Cycle 1%
0.05 0.5 2 0.4
0.1 1 4 0.7
s s s s 2 of 7
UNISONIC TECHNOLOGIES CO., LTD
QW-R203-017,F
MJE13003
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER Inductive Load, Clamp... |
| Description |
NPN EPITAXIAL SILICON TRANSISTOR npn型外延硅晶体
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| File Size |
144.27K /
7 Page |
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WINGS[Wing Shing Computer Components]
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| Part No. |
MJE13005B
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| OCR Text |
... Characteristics
VBE(sat) Ic=2a tf ts fT
1.2
0.9
V
S S MHz
Ic=2a
IB1=- IB2=0.4A 5
-
4
VCE=10V, IC=0.5A, f=1MHz
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341... |
| Description |
NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT)
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| File Size |
67.12K /
1 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE163A
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| OCR Text |
... 4.5A, VCE = 5V IC = 4.5A, IB = 2a IC = 4.5A, IB = 2a 2.25 - - - - - - 5 1.5 V V VCEO(sus) IC = 100mA, IB = 0 ICES VEBO VCE = 1500V, VBE = 0 IE = 10mA, IC = 0 700 - 5 - - - - 1.0 - V mA V Symbol Test Conditions Min Typ Max Unit
Note 2. P... |
| Description |
Silicon NPN Transistor Horizontal Deflection
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| File Size |
22.18K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE164
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| OCR Text |
...EB = 5V, IC = 0 VCE = 15V, IC = 2a Min - - 5 - - - - - Typ - - 20 5.0 - 3 95 0.5 Max Unit 10 5 - 8.5 1.5 - - 1.0 V V MHz pF s A A
VCE(sat) IC = 2a, IB = 0.6A VBE(sat) IC = 2a, IB = 0.6A fT Cob tf VCE = 10V, IC = 0.1A VCB = 10V, IE = 0, f... |
| Description |
Silicon NPN Transistor TV Vertical Output
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| File Size |
19.90K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2312
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| OCR Text |
... Current Gain hFE VCE(sat) IC = 2a, VCE = 5V IC = 5A, VCE = 5V Collector-Emitter Saturation Voltage IC = 2a, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2a IC = 5A, IB = 1A, TC = +100C Base-Emitter Saturation Voltage VBE(sat) IC = 2a, IB = 0.4... |
| Description |
Silicon NPN Transistor High Voltage, High Speed Switch
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| File Size |
22.95K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2318
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| OCR Text |
... 4.5A, VCE = 5V IC = 4.5A, IB = 2a IC = 4.5A, IB = 2a 2.25 - - - - - - 1 1.3 V V Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.
.600 (15.24)
.060 (1.52) .173 (4.4)
C
.156 (3.96... |
| Description |
Silicon NPN Transistor High Voltage, High Speed Switch
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| File Size |
23.06K /
2 Page |
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it Online |
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