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  2a 700v Datasheet PDF File

For 2a 700v Found Datasheets File :: 567    Search Time::4.297ms    
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    NTE[NTE Electronics]
Part No. NTE51
OCR Text .... . . . . . . . . . . . . . . . 2a Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....700v, VBE(off) = 1.5V VCEV = 700v, VBE(off) = 1.5V, TC = +100C Emitter Cutoff Current IEBO VEB = 9V,...
Description Silicon NPN Transistor High Voltage / High Speed Switch
Silicon NPN Transistor High Voltage, High Speed Switch

File Size 23.94K  /  2 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TS13005CZ TS13005 TS13005CI TS13005CP
OCR Text .../ IB = 4A / 1A IC / IB = 1A / 0.2a VCE = 5V, IC = 2a VCE = 10V, IC = 0.5A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 2a, IB1 = 0.4A, IB2 = - 0.4A, RL = 62.5ohm BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 hFE fT Cob tON tSTG tf 8 4 65 0.8 4 ...
Description High Voltage NPN Transistor

File Size 65.85K  /  3 Page

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    TS1300507 TS13005CI TS13005CZ TS13005-07

Taiwan Semiconductor Co...
Taiwan Semiconductor Company, Ltd
Part No. TS1300507 TS13005CI TS13005CZ TS13005-07
OCR Text ...=0 VEB = 9V, IC =0 IC=1A, IB =0.2a IC=2a, IB =0.5A IC=4A, IB =1A Base-Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance VCE =10V, IC =0.5A VCB =10V, f =0.1MHz VCC =125V, IC =2a, IB1 =IB2=0.4A, tP =25uS Duty Cyc...
Description    High Voltage NPN Transistor

File Size 364.42K  /  6 Page

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    TS13007BCZ TS13007B

Taiwan Semiconductor Company, Ltd
Part No. TS13007BCZ TS13007B
OCR Text ...00V 700v 8A 3V @ IC / IB = 8A / 2a Features High Voltage High Speed Switching Block Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13007BCZ C0 Package TO-220 ...
Description High Voltage NPN Transistor

File Size 257.79K  /  5 Page

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    TSC128DCZ TSC128D

Taiwan Semiconductor Company, Ltd
Part No. TSC128DCZ TSC128D
OCR Text ...aturation Voltage IC =1A, IB =0.2a IC =2.5A, IB =0.5A IC =4A, IB =1A IC =0.5A, IB =0.1A Base-Emitter Saturation Voltage IC =1A, IB =0.2a IC =2.5A, IB =0.5A VCE =5V, IC =10mA DC Current Gain Forward Voltage Drop Turn On Time Storage Time VCE...
Description High Voltage Fast-Switching NPN Power Transistor

File Size 321.54K  /  5 Page

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    MORE Semiconductor Comp...
Part No. MSN7002Z
OCR Text 2a r ds(on) <6.5 ? @ v gs =10v high density cell design for ultra low rdson fully characterized avalanche voltage and current ...700v(d-s) n-channel enhancement mode power mos fet msn7002z msn7002z lead free pin configuratio...
Description 700v(D-S) N-Channel Enhancement Mode Power MOS FET

File Size 674.47K  /  4 Page

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    MORE Semiconductor Comp...
Part No. MSN7002F
OCR Text 2a r ds(on) <6.5 ? @ v gs =10v high density cell design for ultra low rdson fully characterized avalanche voltage and current ...700v(d-s) n-channel enhancement mode power mos fet msn7002f msn7002f lead free pin configuratio...
Description 700v(D-S) N-Channel Enhancement Mode Power MOS FET

File Size 755.22K  /  4 Page

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    TSC148DCI TSC148DCZ TSC148D

Taiwan Semiconductor Company, Ltd
Part No. TSC148DCI TSC148DCZ TSC148D
OCR Text ...0V, IE = 0 VEB = 9V, IC = 0 IC =2a, IB =0.4A IC =5A, IB =1A IC =8A, IB =2a IC =4A, IB =0.4A IC =5A, IB =1A VCE =5V, IC =2a VCE =5V, IC =5A If =3A VCC =125V, IC =5A, IB1=IB2=1A, tp =25uS Duty Cycle<1% Symbol BVCBO BVCEO BVEBO ICBO ICEO I...
Description High Voltage Fast-Switching NPN Power Transistor

File Size 316.58K  /  6 Page

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    SSFP2N70

GOOD-ARK Electronics
Part No. SSFP2N70
OCR Text ...e p-n junction diode. TJ=25C,IS=2a,VGS=0V TJ=25C,IF=2a di/dt=100A/s Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: Repetitive rating;pulse width limited by max.junction temperature(see figure 11) ...
Description StarMOST Power MOSFET

File Size 122.83K  /  2 Page

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