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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R321884M-FC25 K7R323684M-FC16 K7R323684M K7R323684M-FC25 K7R323684M-FC20 K7R640982M K7R323682
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| OCR Text |
...ion modify. P.20 from 13mmx15mm to 15mmx17mm 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. U...3P,1B,2C,1E,1F,2J,1K,1L,2M,1P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F... |
| Description |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
193.61K /
18 Page |
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it Online |
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MOTOROLA INC
Motorola, Inc
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| Part No. |
MCM69R820AZP6R MCM69R820AZP6 MCM69R820AZP7R
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| OCR Text |
... write fast static ram designed to provide high performance in secondary cache and atm switch, telecom, and other high speed memory applicat...3p, 5p, 3r v ss supply ground. 4a, 1b, 2b, 4b, 6b, 7b, 1c, 7c, 4d, 4g, 4h, 3j, 5j, 1r, 7r, 1t, 2t, 6... |
| Description |
4M Late Write 2.5 V I/O
4M Late Write 2.5 V I/O
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| File Size |
218.13K /
20 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7I161882B-FC30 K7I163682B-FC30 K7I163682B K7I163682B-FC16 K7I163682B-FC20 K7I163682B-FC25
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| OCR Text |
...nge the Max. speed bin from -33 to -30. 1. Change the ISB1. Speed Bin -30 -25 -20 -16 1.0 2.0 1. Final spec release 1. Delete the x8 Org. 2....3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,... |
| Description |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
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| File Size |
375.70K /
17 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K7Q323682MK7Q321882M
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| OCR Text |
...ics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on...3p data outputs w 4a write control r 8a read control bw 0 , bw 1 7b, 5a byte write control v ref 2h... |
| Description |
1Mx36-bit, 2Mx18-bit QDRSRAM Data Sheet
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| File Size |
441.24K /
17 Page |
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it Online |
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Samsung semiconductor
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| Part No. |
K7S3218U4C
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| OCR Text |
... electronics reserves the right to change products or specification without notice. information in this docume nt is provided in relation t...3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs w 4a write control pin,active when low r 8a read control ... |
| Description |
1Mx36 & 2Mx18 QDR II b4 SRAM
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| File Size |
479.04K /
20 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R643684M K7R641884M
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| OCR Text |
...ics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on ...3P,1B,2C,1E,1F,2J,1K,1L,2M,1P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F... |
| Description |
2Mx36 & 4Mx18 QDRTM II b4 SRAM
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| File Size |
350.56K /
18 Page |
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Motorola
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| Part No. |
MCM63L836A
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| OCR Text |
... write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applicat...3P, 5P, 5R 4A, 1B, 2B, 4B, 7B, 1C, 7C, 4G, 4H, 1R, 7R, 1T, 2T, 6T, 6U Symbol CK CK DQx Type Input In... |
| Description |
8M Late Write HSTL
From old datasheet system
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| File Size |
411.85K /
20 Page |
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it Online |
Download Datasheet |
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Motorola
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| Part No. |
MCM69R618 MCM69R536
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| OCR Text |
... write fast static RAM designed to provide high performance in secondary cache, ATM switch, Telecom, and other high speed memory application...3P, 5P, 3R 4A, 1B, 2B, 3B, 4B, 5B, 6B, 7B, 1C, 7C, 1R, 7R, 1T, 2T, 6T, 6U 4G, 4H Symbol CK CK DQx Ty... |
| Description |
1M Late Write HSTL
From old datasheet system
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| File Size |
141.47K /
20 Page |
View
it Online |
Download Datasheet |
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