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PTB200 02002 B41605 E206A 81250 C1145HSE 24C64 SBE808
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  tp-st Datasheet PDF File

For tp-st Found Datasheets File :: 9455    Search Time::1.5ms    
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    BZA109TS

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BZA109TS
OCR Text ... = 25 C DC; Tamb = 25 C; note 1 tp = 1 ms; square wave tp = 1 ms; square wave Tamb = 25 C; note 2 - -65 -65 MIN. - - - - BZA109TS MAX....St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICOND...
Description 9-fold ESD Transient Suppressor

File Size 308.20K  /  12 Page

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    IRF7201 IRF7201PBF IRF7201TR

International Rectifier
Part No. IRF7201 IRF7201PBF IRF7201TR
OCR Text ...-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Ma...St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.i...
Description Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 111.54K  /  7 Page

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    L88MS33T

Sanyo Semicon Device
Part No. L88MS33T
OCR Text ...e Dimensions unit : mm 3103-TP-5H [L88MS33T] Functions . Output voltage: 3.3 V . On/off control of output voltage by strobe pin (...ST ON) - Ta (except IST) Quiescent current during strobe, IQ OFF Ambient temperature, Ta - ...
Description 3.3 V, 0.5 A Low Dropout Voltage Regulator with On/Off Function

File Size 126.89K  /  7 Page

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    MBRS1100TR MBRS190TR

IRF[International Rectifier]
Part No. MBRS1100TR MBRS190TR
OCR Text ...ectangular waveform VRRM IFSM @ tp = 5 s sine VF TJ @ 1.0 Apk, TJ=125C range Description/Features The MBRS190TR, MBRS1100TR surface-moun...St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.i...
Description 100V 1A Schottky Discrete Diode in a SMB package
SCHOTTKY RECTIFIER

File Size 102.21K  /  6 Page

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    PDZ10B PDZ11B PDZ16B PDZ18B PDZ8.2B PDZ9.1B PDZ6.2B PDZ4.3B PDZ3.0B PDZ5.6B PDZ30B PDZ2.7B PDZ22B PDZ27B PDZ20B PDZ24B P

PHILIPS[Philips Semiconductors]
Part No. PDZ10B PDZ11B PDZ16B PDZ18B PDZ8.2B PDZ9.1B PDZ6.2B PDZ4.3B PDZ3.0B PDZ5.6B PDZ30B PDZ2.7B PDZ22B PDZ27B PDZ20B PDZ24B PDZ2.4B PDZ3.6B PDZ4.7B PDZ5.1B PDZ36B PDZ3.9B PDZ6.8B
OCR Text ...emperature junction temperature tp = 100 s; square wave; Tamb = 25 C prior to surge Tamb = 25 C; note 1; see Fig.2 CONDITIONS MIN. - MAX. 20...St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICOND...
Description Voltage regulator diodes

File Size 49.48K  /  8 Page

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    PLVA650 PLVA650A PLVA653A PLVA656A PLVA659A PLVA665A PLVA600A PLVA662A PLVA668A PLVA600A_2

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. PLVA650 PLVA650A PLVA653A PLVA656A PLVA659A PLVA665A PLVA600A PLVA662A PLVA668A PLVA600A_2
OCR Text ...emperature junction temperature tp = 100 s; = 10% Tamb = 25 C; note 1 - -65 - non-repetitive peak reverse power dissipation tp = 100 s; Tj ...St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICOND...
Description From old datasheet system
Low-voltage avalanche regulator diodes

File Size 43.82K  /  8 Page

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    PSMS12C PSMS05C PSMS15C PSMS24C PSMS05 PSMS12 PSMS15 PSMS24

ETC[ETC]
PROTEC[Protek Devices]
Part No. PSMS12C PSMS05C PSMS15C PSMS24C PSMS05 PSMS12 PSMS15 PSMS24
OCR Text ...atts Peak Pulse Power per Line (tp=8/20s) Monolithic Design Available in Multiple Voltage Types Ranging From 5V to 24V Protect 4 Lines ESD Protection > 25 kilovolts Low Clamping Voltage Unidirectional & Bidirectional Configurations L...
Description STANDARD CAPACITANCE TVS ARRAY

File Size 180.88K  /  5 Page

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    SPD07N60S5 SPU07N60S5

INFINEON[Infineon Technologies AG]
Part No. SPD07N60S5 SPU07N60S5
OCR Text ...nit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = - A, V DD = 50 V I D puls EAS 14.6 230 0.5 7...St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attent...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 259.07K  /  11 Page

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    SPD18P06P SPU18P06P

INFINEON[Infineon Technologies AG]
Part No. SPD18P06P SPU18P06P
OCR Text ... C = 25 C -10 2 ZthJC = f (tp ) parameter : D = tp /T tp = 29.0s SPD18P06P 10 1 SPD18P06P K/W 10 0 A Z thJC 100...St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPD...
Description SIPMOS Power-Transistor

File Size 116.51K  /  9 Page

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    SPW47N60S5

INFINEON[Infineon Technologies AG]
Part No. SPW47N60S5
OCR Text ... 47 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 94 1800 1 20 2...St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPW...
Description for lowest Conduction Losses
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 233.05K  /  11 Page

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