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8-ghz Datasheet PDF File

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				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS17P Q62702-F940 BFS17PQ62702-F940
OCR Text	...ctor-base capacitance Ccb 0.8 1.5 pF VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance Cce - VCE = 5 V, V...GHz Ccb 1.0 0.9 0.8 0.7 fT 2.0 10V 5V 3V 2V 1.5 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8...
Description	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 CAP 15000PF X7R 250VAC X2 2220 TRANSISTOR UHF BIPOLAR BREITBAND From old datasheet system
File Size	48.51K / 5 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken] Vishay Siliconix
Part No.	BFS17R BFS17W BFS17
OCR Text	... Min Typ 1.5 2.4 2.1 0.45 0.2 0.8 3.5 23 11 100 Max Unit GHz GHz GHz pF pF pF dB dB dB mV 23 dBm Document Number 85038 Rev. 4, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Co...
Description	Silicon NPN Planar RF Transistor From old datasheet system
File Size	148.66K / 10 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS17S Q62702-F1645
OCR Text	...ctor-base capacitance Ccb 0.8 1.5 pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance Cce - VCE = 5 V, f = 1 MHz Input ...GHz Linear output voltage V01=V02 100 - mV IC = 14 mA, VCE = 5 V, dim = 60 dB f1 = 806 MH...
Description	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 5 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFS17W
OCR Text	...5 - - - - MIN. - - - - 90 1.6 0.8 0.75 - TYP. MAX. 25 15 50 300 - - 1.5 - 175 GHz pF pF C UNIT V V mA mW 1995 Sep 04 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL...
Description	NPN 1GHz wideband transistor(NPN 1G赫兹宽带晶体 NPN 1 GHz wideband transistor
File Size	46.15K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFS17
OCR Text	... - - - - - TYP. - 90 90 1 1.6 0.8 - 0.65 4.5 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 C; note ...GHz GHz pF pF pF dB September 1995 3 Philips Semiconductors Product specification NPN...
Description	NPN 1 GHz wideband transistor
File Size	37.46K / 6 Page	View it Online	Download Datasheet

				OKI electronic componet... OKI[OKI electronic componets] OKI electronic eomponets
Part No.	KGF1323
OCR Text	... a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, hig...GHz Z0 = 50 W 6/7 electronic components KGF1323 Test Circuit and Bias Configuration for...
Description	From old datasheet system Power FET(Plastic Package Type)
File Size	81.61K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	LLE16045X
OCR Text	...lications between 1.5 GHz and 1.8 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. 2 Top view handbook, 4 columns LLE16045X ...
Description	NPN microwave power transistor
File Size	75.36K / 12 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE4210M01 NE4210M01-T1
OCR Text	...e & High Associated Gain NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200m ORDERING INFORMATION Part Number NE4210M01-T1 Package 6-pin super minimold Supplying Form Embossed tape 8 mm wide...
Description	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	77.13K / 12 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE4210S01 NE4210S01-T1 NE4210S01-T1B
OCR Text	... Source Voltage VGS (V) 0 8 4 1 2 4 6 8 10 14 20 30 Frequency f (GHz) Data Sheet P14232EJ2V0DS00 3 NE4210S01 Gain Calculations MSG. = S21 S12 S21 S12 K= 1 + \| \|2 - \|S11 \|2 - \|S22\|2 2 \|S12...
Description	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	62.93K / 16 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1124 BF770A
OCR Text	...rrent gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BF 770A Electrical Characteristics at TA = 25C, unless ...GHz pF 0.9 dB 2 3.3 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce ...
Description	NPN Silicon RF Transistor (For IF amplifiers in TV-sat tuners and for VCR modulators) From old datasheet system
File Size	19.68K / 3 Page	View it Online	Download Datasheet

For 8-ghz Found Datasheets File :: 30288 Search Time::3.203ms
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