...GH SPEED PROGRAMMING (less than 1 minute)
28
1
FDIP28W (F)
PLCC32 (C)
DESCRIPTION The M27C64A is a high speed 65,536 bit Uv e...25v; vPP = 12.5v 0.3v)
Symbol ILI ICC IPP vIL vIH vOL vOH vID Parameter Input Leakage Current Supp...
Description
64K (8K x 8) Uv EPROM and OTP ROM 64K的(8K的8)紫外线EPROM和检察官办公室光
...
(Ta=25C)
Ratings -25 -20 -7 -1 - 0.5 600 150 -55 ~ +150 Unit v v v A A mW C C
13.50.5
5.10.2
s Features
0.45 -0.1 1.27
+0....25v, IE = 0 vCE = -20v, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 vCE = -2v, IC =...
...m 2038A
[2SA2013/2SC5566]
4.5 1.6 1.5
Features
* Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-to-e...25v IB1 IB2 OUTPUT 25
10IB1= --10IB2= IC=1A (For PNP, the polarity is reversed.)
--4
IC -- ...
...mm 2163
[2SA2016/2SC5569]
4.5 1.6 1.5
Features
* Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-to-e...25v 20IB1= --20IB2= IC=2.5A (For PNP, the polarity is reversed.)
--7
IC -- vCE
2SA2016 --90mA...
1.0A)
2SA2048
!Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1.0A) 2) Low saturation voltage, typically (Typ. : -150mv at I...25v Fall time
!hFE RANK
Q 120-270 R 180-390
!Electrical characteristic curves
-10
1000
C...
Description
Medium power transistor (−30v, −1.0A) Medium power transistor (-30v, -1.0A)
1) High speed switching. (Tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically (Typ. : -200mv at IC = -2A, IB = -0.2A) 3) Stro...25v 2 Fall time
1 Non repetitive pulse 2 See switching charactaristics measurement cicuits
1
...
Description
Power transistor (-60v, -3A) Power transistor (−60v −3A) Power transistor (−60v, −3A)