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MCC[Micro Commercial Components]
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| Part No. |
2SB744
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| OCR Text |
...
Features
* * * * Capable of 10watts of Power Dissipation. Collector-current 3.0A Collector-base Voltage 70V O Operating and storage junction temperature range: -55 C to O +150 C
UL Flammability
PNP Silicon Power Transistor
* *
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| Description |
PNP Silicon Power Transistor
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| File Size |
332.41K /
2 Page |
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it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1210
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| OCR Text |
...match Toleranc MIN 10 60 TYP
10watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 12.5 V, F = 175 MHz Idq = 0.4 A, Vds = 12.5 V, F = 175 MHz Idq = 0.4 A, Vds = 12.5 V, F = 175 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
36.84K /
2 Page |
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it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1214
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| OCR Text |
...match Toleranc MIN 10 60 TYP
10watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 12.5 V, F = 400 MHz Idq = 0.4 A, Vds = 12.5 V, F = 400 MHz Idq = 0.4 A, Vds = 12.5 V, F = 400 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
34.62K /
2 Page |
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it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1221
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| OCR Text |
...match Toleranc MIN 10 60 TYP
10watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 12.5 V, F = 400 MHz Idq = 0.4 A, Vds = 12.5 V, F = 400 MHz Idq = 0.4 A, Vds = 12.5 V, F = 400 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
36.85K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1510
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| OCR Text |
...match Toleranc MIN 12 55 TYP
10watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 500 MHz Idq = 0.4 A, Vds = 28.0 V, F = 500 MHz Idq = 0.4 A, Vds = 28.0 V, F = 500 MHz
VSWR
ELECTRICAL CHAR... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
35.19K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F2012
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| OCR Text |
...match Toleranc MIN 10 45 TYP
10watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz
VSWR
ELECTRICAL C... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
36.64K /
2 Page |
View
it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F2048
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| OCR Text |
...match Toleranc MIN 10 45 TYP
10watts OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.8 A, Vds = 28.0 V, F = 1000 MHz
VSWR
ELECTRICAL C... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
36.93K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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