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New Jersey Semiconductor
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Part No. |
1N4701-TAPE 1N4704C 1N4704A 1N4712D 1N4712C 1N4709D 1N4705D 1N4702D 1N4705C 1N4708D 1N4710D 1N4700D 1N4683D 1N4716D 1N4690D 1N4694D
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Description |
Diode Zener Single 14V 5% 500mW 2-Pin DO-35 Ammo Diode Zener Single 17V 2% 500mW 2-Pin DO-35 Diode Zener Single 17V 5% 2-Pin DO-7 Diode Zener Single 28V 1% 500mW 2-Pin DO-35 Diode Zener Single 28V 2% 500mW 2-Pin DO-35 Diode Zener Single 24V 1% 500mW 2-Pin DO-35 Diode Zener Single 18V 1% 500mW 2-Pin DO-35 Diode Zener Single 15V 1% 500mW 2-Pin DO-35 Diode Zener Single 18V 2% 500mW 2-Pin DO-35 Diode Zener Single 22V 1% 500mW 2-Pin DO-35 Diode Zener Single 25V 1% 500mW 2-Pin DO-35 Diode Zener Single 13V 1% 500mW 2-Pin DO-35 Diode Zener Single 3V 1% 500mW 2-Pin DO-35 Diode Zener Single 39V 1% 500mW 2-Pin DO-35 Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35 Diode Zener Single 8.2V 1% 500mW 2-Pin DO-35
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File Size |
58.29K /
1 Page |
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it Online |
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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Part No. |
1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1N4702 1N4700 1N4680 1N4681 1N4707 1N4701 1N4704 1N4678 1N4687 1N4690 1N4689 1N4715 1N4711 1N4710 1N4693 1N4688 1N4696 1N4692 1N4697 1N4695 1N4691 1N4679 1N4682 1N4712 1N4716 1N4699
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Description |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管) PC 5/10-G-7,62 PCV 5/ 4-G-7,62 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管) From old datasheet system Silicon Epitaxial Planar Z?Diodes
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File Size |
66.71K /
6 Page |
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it Online |
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