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  24C08B Datasheet PDF File

For 24C08B Found Datasheets File :: 11+       Page :: | <1> | 2 |   

    Microchip Technology Inc.
Part No. 24C08B 24C16B
Description 8K 5.0V E-Temperature serial EEPROMs(8K5.0VM次擦写周期,硬件写保护,施密特触发输入,EEPROM)
16K 5.0V E-Temperature serial EEPROMs(16K5.0VM次擦写周期,硬件写保护,施密特触发输入的EEPROM)

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HUA FENG CIRCUIT





    24C08B 24C08B-EP 24C08B-ESL 24C08B-ESN 24C16B 24C16B-EP 24C16B-ESL 24C16B-ESN 24C08

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Microchip Technology, Inc.
Microchip Technology Inc.
MicrochipTechnology
MICROCHIP[Microchip Technology]
Part No. 24C08B 24C08B-EP 24C08B-ESL 24C08B-ESN 24C16B 24C16B-EP 24C16B-ESL 24C16B-ESN 24C08
Description The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
DIODE ZENER 5.1V 120MW SSSMINI2
8K/16K5.0VI2COSerialEEPROMs
8K/16K 5.0V I 2 C O Serial EEPROMs

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    天津新技术产业园区管理委员会
Part No. 24C08B-I/SL 24C08B-I/SN 24C08B-I/P 24C08BT-I/SL 24C08BT-I/SN 24C16BT-I/SL 24C16BT-I/SN 24C08BT-/SL 24C16BT-/SL 24C16BT-/SN 24C16BT-E/SL 24C16BT-E/SN 24C08BT-E/SN 24C08BT-/SN 24C08BT-E/SL 24C16B-/SN 24C16B-E/SN 24C08B-/SN 24C08B-E/SL
Description I2C Serial EEPROM I2C串行EEPROM

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    AT24C08B AT24C08BN-SH-B AT24C08BN-SH-T AT24C08B-PU AT24C08B-W-113 AT24C08BY6-YH-T

ATMEL Corporation
Part No. AT24C08B AT24C08BN-SH-B AT24C08BN-SH-T AT24C08B-PU AT24C08B-W-113 AT24C08BY6-YH-T
Description Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8)

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    AT24C08B-TH-B AT24C08B-TH-T AT24C04BY6-YH-T AT24C04BU3-UU-T AT24C08BU3-UU-T AT24C04B-TSU-T AT24C08B-TSU-T AT24C04B-PU AT

ATMEL Corporation
Part No. AT24C08B-TH-B AT24C08B-TH-T AT24C04BY6-YH-T AT24C04BU3-UU-T AT24C08BU3-UU-T AT24C04B-TSU-T AT24C08B-TSU-T AT24C04B-PU AT24C04B-TH-B AT24C04B-TH-T AT24C04B-W-11 AT24C04BN-SH-B AT24C04BN-SH-T
Description Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8)

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    AT24C01BN-SP25-B AT24C02BN-SP25-B AT24C04BN-SP25-B AT24C08BN-SP25-B AT24C01BN-SP25-T AT24C02BN-SP25-T AT24C04BN-SP25-T A

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ATMEL Corporation
Part No. AT24C01BN-SP25-B AT24C02BN-SP25-B AT24C04BN-SP25-B AT24C08BN-SP25-B AT24C01BN-SP25-T AT24C02BN-SP25-T AT24C04BN-SP25-T AT24C08BN-SP25-T AT24C02B-TP25-B AT24C02B-TP25-T AT24C01B09 AT24C01B-TP25-B AT24C01B-TP25-T AT24C04B-TP25-B AT24C08B-TP25-B AT24C04B-TP25-T AT24C08B-TP25-T AT24C02B
Description 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Two-wire Automotive Temperature Serial EEPROM

File Size 418.13K  /  20 Page

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    AT24C04B09 AT24C04B-PU AT24C04B-TH-B AT24C04B-TH-T AT24C04B-TSU-T AT24C04B-W-11 AT24C04BN-SH-B AT24C04BN-SH-T AT24C04BU3

ATMEL Corporation
聚兴科技股份有限公司
Atmel, Corp.
Part No. AT24C04B09 AT24C04B-PU AT24C04B-TH-B AT24C04B-TH-T AT24C04B-TSU-T AT24C04B-W-11 AT24C04BN-SH-B AT24C04BN-SH-T AT24C04BU3-UU-T AT24C08BN-SH-T AT24C08BY6-YH-T AT24C04BY6-YH-T AT24C08B-PU
Description Two-wire Serial EEPROM
8-ULTRA THIN MINI MAP,PB/HALO FREE,1.8V(SERIAL EE) 512 X 8 I2C/2-WIRE SERIAL EEPROM, DSO8
8-DBGA2,PB/HALO FREE,1.8V(SERIAL EE) 512 X 8 I2C/2-WIRE SERIAL EEPROM, PBGA8
8-PDIP, Pb/HALO FREE, 1.8V(SERIAL EE) 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
DIE SALE,1.8V, 11MIL(SERIAL EE) 512 X 8 I2C/2-WIRE SERIAL EEPROM, UUC

File Size 242.40K  /  28 Page

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    X24C08S8IG-3.5 X24C08S14IG-3.5 X24C08PIG-3.5 X24C08S X24C08S14G-2.7 X24C08S14G-3 X24C08S14G-3.5 X24C08P-2.7 X24C08P-3 X2

IC MICROSYSTEMS Sdn. Bhd.
Part No. X24C08S8IG-3.5 X24C08S14IG-3.5 X24C08PIG-3.5 X24C08S X24C08S14G-2.7 X24C08S14G-3 X24C08S14G-3.5 X24C08P-2.7 X24C08P-3 X24C08P-3.5 X24C08PG X24C08PG-2.7 X24C08PG-3 X24C08PG-3.5 X24C08PI X24C08PI-2.7 X24C08PI-3 X24C08PI-3.5 X24C08PIG X24C08PIG-2.7 X24C08PIG-3 X24C08PM X24C08PM-2.7 X24C08PM-3 X24C08 X24C08PM-3.5 X24C08S14 X24C08S14-2.7 X24C08S14-3 X24C08S14-3.5 X24C08S14G X24C08S14I X24C08S14I-2.7 X24C08S14I-3 X24C08S14I-3.5 X24C08S14IG X24C08S14IG-2.7 X24C08S14IG-3 X24C08S14M X24C08S14M-2.7 X24C08S14M-3 X24C08DG X24C08DP X24C08DS X24C08DS8 X24C08EG X24C08EP X24C08ES X24C08ES8 X24C08PMG-2.7 X24C08PMG-3 X24C08PMG-3.5 X24C08S8-3 X24C08S8-2.7 X24C08CG X24C08CP X24C08CS X24C08CS8 X24C08S8M-2.7 X24C08S8I-3 X24C08S14MG-2.7 X24C08S14MG-3 X24C08S14MG-3.5 X24C08S8I-2.7 X24C08IG X24C08IP X24C08IS X24C08IS8 X24C08BS8 X24C08S8G-2.7 X24C08FS8 X24C08S8I-3.5 X24C08S8M-3 X24C08S8MG-2.7 X24C08S8MG-3 X24C08S8MG-3.5 X24C08S14M-3.5 X24C08S8-3.5 X24C08S8G-3.5 X24C08S8M-3.5 X24C08S8IG-2.7
Description Serial E2PROM
1K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 ROHS COMPLIANT, PLASTIC, DIP-8

File Size 299.69K  /  16 Page

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    24C08 ST25C08 ST25C08B1TR ST25C08B3TR ST25C08B5TR ST25C08B6TR ST25C08M1TR ST25C08M3TR ST25C08M5TR ST25C08M6TR ST24W08B1T

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C08 ST25C08 ST25C08B1TR ST25C08B3TR ST25C08B5TR ST25C08B6TR ST25C08M1TR ST25C08M3TR ST25C08M5TR ST25C08M6TR ST24W08B1TR ST24W08B3TR ST24W08B5TR ST24W08B6TR ST25W08B1TR ST25W08B3TR ST25W08B5TR ST25W08B6TR ST24C08 ST24C08B1TR ST24C08B3TR ST24C08B5TR ST24C08B6TR ST24C08M1TR ST24C08M3TR ST24C08M5TR ST24C08M6TR ST24W08 ST25W08M1TR ST25W08M3TR ST25W08M5TR ST25W08M6TR ST24W08M1TR ST24W08M3TR ST24W08M5TR ST24W08M6TR ST25W08
Description IC ACEX 1K FPGA 100K 484-FBGA
Pulse Width Modulation (PWM) Controller IC; Topology:Flyback, Forward; Control Mode:Current; Number of PWM Outputs:1; Input Voltage Primary Min:15V; Input Voltage Primary Max:200V; Duty Cycle Max:50%
MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:150V; Case style:PowerPak SO-8; Current, Id
(ST2xxx) 8 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
8 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
8KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection

File Size 124.09K  /  16 Page

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    M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3

意法半导
EEPROM
STMicroelectronics N.V.
Part No. M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
Description 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM

File Size 144.80K  /  25 Page

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