4 banks x 4m x 16bit synchrono pdf Datasheet P1 Description --- IC-ON-LINE


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4 banks x 4m x 16bit synchrono Datasheet PDF File

For 4 banks x 4m x 16bit synchrono Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16bit x 4 banks synchronous DRAM 100万16 × 4银行同步DRAM
File Size	124.02K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L70 K4S641632C-TC/L80 K4S641632C-TC/L60 K4S641632C-TC/L75 K4S641632C-TL60 K4S641632C-TC80
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16bit x 4 banks synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
File Size	1,152.92K / 42 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
Description	SDRAM - 64Mb 4 banks x 1M x 16bit synchronous DRAM 4M x 16 synchronoUS DRAM, 6 ns, PDSO54 4 banks x 1M x 16bit synchronous DRAM 4M x 16 synchronoUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 banks x 1M x 16bit synchronous DRAM 4M x 16 synchronoUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:x7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
Description	4 banks x 1M x 16bit synchronous DRAM 4银行× 1米16位同步DRAM 4 banks x 1M x 16bit synchronous DRAM 4M x 16 synchronoUS DRAM, 4.5 ns, PDSO54
File Size	84.91K / 12 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_L1L K4S641632C-TC_L60
Description	1M x 16bit x 4 banks synchronous DRAM
File Size	778.45K / 42 Page	View it Online	Download Datasheet

				TwinMOS
Part No.	TTS3816B4E
Description	2M x 16bit x 4 banks synchronous DRAM
File Size	300.30K / 8 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL
Description	2M x 16bit x 4 banks synchronous DRAM
File Size	116.68K / 10 Page	View it Online	Download Datasheet

For 4 banks x 4m x 16bit synchrono Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |