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  BDY23 Datasheet PDF File

For BDY23 Found Datasheets File :: 9+       Page :: | <1> |   

    BDY23

Inchange Semiconductor Company Limited
Part No. BDY23
Description isc Silicon NPN Power Transistor

File Size 56.81K  /  2 Page

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HUA FENG CIRCUIT





    BDY23B

Seme LAB
Part No. BDY23B
Description Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3

File Size 10.83K  /  1 Page

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    BDY23C.MOD BDY23C

Seme LAB
TT electronics Semelab, Ltd.
Part No. BDY23C.MOD BDY23C
Description Bipolar NPN Device in a Hermetically sealed TO3
6 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA HERMETIC SEALED, METAL, TO-3, 2 PIN

File Size 11.66K  /  1 Page

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    BDY23.MOD BDY23.MODR1 BDY23

Seme LAB
TT electronics Semelab, Ltd.
Part No. BDY23.MOD BDY23.MODR1 BDY23
Description Bipolar NPN Device in a Hermetically sealed TO3
6 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA HERMETIC SEALED, METAL, TO-3, 2 PIN

File Size 10.83K  /  1 Page

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    BDY23 BDY24 BDY25

Comset Semiconductor
Part No. BDY23 BDY24 BDY25
Description NPN SILICON TRANSISTORS, DIFFUSED MESA

File Size 237.91K  /  4 Page

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    BDY23A.MODR1 BDY23A

Seme LAB
TT electronics Semelab, Ltd.
Part No. BDY23A.MODR1 BDY23A
Description Bipolar NPN Device in a Hermetically sealed TO3
6 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA HERMETIC SEALED, METAL, TO-3, 2 PIN

File Size 10.83K  /  1 Page

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    New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
Part No. BDY25 BDY24 BDY23 181T2
Description LF large signal power amplification
   LF large signal power amplification

File Size 95.38K  /  3 Page

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    New Jersey Semiconductor
Part No. BDY23A BDY25A BDY25B BDY25C
Description Trans GP BJT NPN 60V 6A 3-Pin(2 Tab) TO-3
Trans GP BJT NPN 140V 6A 3-Pin(2 Tab) TO-3

File Size 92.23K  /  3 Page

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    BDY25 180T2 181T2 182T2 BDY23 BDY24 BDY182 BDY181

Comset Semiconductors
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. BDY25 180T2 181T2 182T2 BDY23 BDY24 BDY182 BDY181
Description 8/20us Max :65V; Peak Energy (10/1000uS):1.2J; Capacitance, Cd:1100pF
NPN SILICON TRANSISTORS/ DIFFUSED MESA
8/20us Max :65V; Peak Energy (10/1000uS):3J; Capacitance, Cd:2700pF
NPN SILICON TRANSISTORS, DIFFUSED MESA

File Size 167.01K  /  4 Page

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