450mW lead frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION type MICRO(frame type)
600mW lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL type MICRO(frame type)
600mW lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL type MICRO(frame type)