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nano-c Datasheet PDF File

For nano-c Found Datasheets File :: 444 Search Time::1.688ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	74LS123 DM74LS123 DM74LS123M DM74LS123N DM74LS123SJ 74LS12 DM74LS123NX DM74LS123MX DM74LS123SJX
OCR Text	...rating output pulses from a few nano-seconds to extremely long duration up to 100% duty cycle. Each device has three inputs permitting the c...c) 2000 Fairchild Semiconductor Corporation DS006386 www.fairchildsemi.com DM74LS123 Fun...
Description	Dual Retriggerable One-Shot with Clear and Complementary Outputs
File Size	94.78K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...0 Qrr, REVERSE RECOVERY CHARGE (nano-cOULOMBS) 1600 TJ = 100C VR = 350V IF, FORWARD CURRENT (AMPERES) 80 TJ = 150C TJ = 100C 40 12...C) Figure 18, Dynamic Parameters vs Junction Temperature 2500 tfr, FORWARD RECOVERY TIME (nano-SECON...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...0 Qrr, REVERSE RECOVERY CHARGE (nano-cOULOMBS) 1600 TJ = 100C VR = 350V IF, FORWARD CURRENT (AMPERES) 80 TJ = 150C TJ = 100C 40 12...C) Figure 18, Dynamic Parameters vs Junction Temperature 2500 tfr, FORWARD RECOVERY TIME (nano-SECON...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	...0 Qrr, REVERSE RECOVERY CHARGE (nano-cOULOMBS) 2500 TJ = 100C VR = 350V IF, FORWARD CURRENT (AMPERES) 160 TJ = 150C TJ = 100C 80 TJ =...C) Figure 4, Dynamic Parameters vs Junction Temperature 1200 15.0 Vfr, FORWARD RECOVERY VOLTAGE (VOL...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] http://
Part No.	UA776 UA776CD UA776CN UA776D UA776ID UA776IN UA776MD UA776MN UA776N
OCR Text	... the chip quiescent current for nano-watt power consumption or for characteristics similar to the UA741. Internal frequency compensation,abs...C C Note : 1. For supply voltages less than 15V, the absolute maximum input voltage is equal to t...
Description	OP-AMP, 6000 uV OFFSET-MAX, 0.7 MHz BAND WIDTH, PDIP8 OP-AMP, 6000 uV OFFSET-MAX, 0.7 MHz BAND WIDTH, PDSO8 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS
File Size	98.68K / 8 Page	View it Online	Download Datasheet

				Calogic LLC Calogic LLC CALOGIC[Calogic, LLC]
Part No.	SSTJ210 SSTJ211 SSTJ212 J210 J211 J212
OCR Text	...under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for mixer, oscillators and a...C o C o C ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL CHARACTERISTCS TY...
Description	N-Channel JFET UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.6V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.6V RoHS Compliant: No
File Size	22.84K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. TECCOR[Teccor Electronics]
Part No.	ST-40 HT-40 HT-32 HT-32A HT-32B HT-60 HT HT-34B HT-35 HT-36A HT-36B HT-5761 HT-5761A HT-5762 ST-34B ST-35 ST-36A ST-36B
OCR Text	.... Typical switching time is 900 nano-seconds measured at IPK (see Figure 8.4) across a 20 resistor (see Figure 8.5). Switching time defined ...C for DO-35 and 3mW/C for DO-214AA * Temperature Ranges Storage: -40C to +125C Operating (Junction):...
Description	Bilateral Trigger Diacs 双边触发Diacs
File Size	550.96K / 4 Page	View it Online	Download Datasheet

				Vitesse Semiconductor Corpo... Vitesse Semiconductor Corporation. ETC N.A. http://
Part No.	VSC7123 VSC7123QN VSC7123QU VSC7123RD
OCR Text	...o VDD-2.0. bc = Bit clocks ns = Nano second Transmitter Output Jitter Allocation RJ DJ Random jitter (RMS) Serial data output determinis...c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FA...
Description	10-Bit Transceiver for Fibre Channel and Gigabit Ethernet
File Size	206.66K / 18 Page	View it Online	Download Datasheet

				Vitesse Semiconductor Corpo... ETC[ETC] Vitesse Semiconductor Corporation
Part No.	VSC7125 VSC7125QN VSC7125QU
OCR Text	...mple basis bc = Bit clocks ns = Nano second Trj TDJ Latency from rising edge of 11bc - 1ns ns. REFCLK to T0 appearing on TX+/TXTransmi...c) VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano, Camarillo, CA 93012 * 805/388-3700 * FAX: 805/...
Description	1.0625 Gbits/sec Fibre Channel Transceiver
File Size	123.35K / 16 Page	View it Online	Download Datasheet

For nano-c Found Datasheets File :: 444 Search Time::1.688ms
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