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  T60N32 Datasheet PDF File

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    GT60N322

Toshiba Semiconductor
Part No. GT60N322
Description Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

File Size 161.78K  /  6 Page

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    Toshiba, Corp.
Part No. GT60N321
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四

File Size 172.02K  /  6 Page

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    Toshiba
Part No. GT60N321 EA09964
Description High Power Switching Applications The 4th Generation
From old datasheet system

File Size 265.17K  /  5 Page

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Part: T60407L5026X1482
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