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UTC[Unisonic Technologies]
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| Part No. |
MJD210
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| OCR Text |
TRANSISTOR
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION
The UTC MJD210 is designed for low voltage, low-power, high-gain au...TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise noted)
PARAMETER
OFF CHARACTERIST... |
| Description |
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
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| File Size |
161.20K /
5 Page |
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http://
ONSEMI[ON Semiconductor]
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| Part No. |
MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D
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| OCR Text |
...the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not... |
| Description |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount
Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR
Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
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| File Size |
123.53K /
8 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MJ410
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| OCR Text |
...nc. 1995 Motorola Bipolar Power Transistor Device Data
High Voltage NPN Silicon Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMU... |
| Description |
5 AMPERE POWER TRANSISTOR NPN SILICON
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| File Size |
139.82K /
4 Page |
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it Online |
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Motorola Inc
MOTOROLA[Motorola, Inc]
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| Part No. |
MJ3281A NH1302A
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| OCR Text |
...y NPN-PNP Silicon Power Bipolar Transistor
The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. * Designed for 100 W Audio Frequency * Gain Complementary: -- Gai... |
| Description |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
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| File Size |
221.46K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
RN4988FS
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| OCR Text |
transistor silicon npn pnp epitaxial type (pct process) (bias resistor built-in transistor) rn4988fs switching, inverter circuit, interface circuit and driver circuit applications ? two devices are incorporated into a fine p... |
| Description |
Bias resistor built-in transistor (BRT), 2-in-1
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| File Size |
155.77K /
7 Page |
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it Online |
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UNISONIC TECHNOLOGIES CO LTD
UTC[Unisonic Technologies]
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| Part No. |
MJE13002
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| OCR Text |
TRANSISTOR
NPN SILICON POWER TRANSISTOR
The UTC MJE13002 designed for use in high-volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator's,in... |
| Description |
1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN SILICON POWER TRANSISTOR
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| File Size |
147.77K /
7 Page |
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it Online |
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Motorola Inc
MOTOROLA[Motorola, Inc]
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| Part No. |
MJ10023 MJ10022
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| OCR Text |
...nc. 1995 Motorola Bipolar Power Transistor Device Data The MJ10022 and MJ10023 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited... |
| Description |
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
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| File Size |
300.22K /
8 Page |
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it Online |
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