| PART |
Description |
Maker |
| IXBT42N170A IXBH42N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| SG23N06DT SG23N06T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| IRGBCX0U IRGPCX0U IRGPF50U |
(IRGxxxx) Discrete IGBTs
|
International Rectifier
|
| GT50MR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT30J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40RR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| IRGPC50M |
Insulated Gate Bipolar Transistors (IGBTs)(??矾棰??瓒?揩???缂?????????朵?绠?
600V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| ILA03N60 ILB03N60E3045A ILD03N60 ILP03N60 |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 FullPak
IGBTs & DuoPacks - 3A / 600V LightMOS in TO263
IGBTs & DuoPacks - 3A / 600V LightMOS in DPak
|
Infineon
|
