| PART |
Description |
Maker |
| 6DI50B-050 6DI50B050 1DI200A140 2DI100A140 2DI30A1 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 15A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 100A I(C)
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.4KV V(BR)CEO | 200A I(C)
4-Wire Interfaced, 2.7V to 5.5V, 4-Digit 5 x 7 Matrix LED Display Driver
Bipolar Transistor Modules
|
Fuji Electric Co., Ltd.
|
| 1DI300M-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
| OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五（巴西）直| 4A条（丁）
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五（巴西）直| 2.5AI（四
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五（巴西）直| 6A条（丁）
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五（巴西）直|甲（丁）
|
Samwha Electronics
International Rectifier, Corp.
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
|
CERAMATE TECHNOLOGY CO., Ltd.
|
| MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| EVK75-050 2DI75S050A |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五（巴西）总裁| 75
|
Analog Devices, Inc.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| QCA100A40 QCA100A60 QBB100A60 |
(QCA100A40 / QCA100A60) TRANSISTOR MODULE
(QBB100A40 / QBB100A60) TRANSISTOR MODULE
|
SanRex Corporation
|
| 6DI20C-050 |
POWER TRANSISTOR MODULE
|
http://
Fuji Electric
|
| 2DI150M-120 |
Power Transistor Module
|
Fuji Electric
|
